| PART |
Description |
Maker |
| IRF1405ZL-7PPBF IRF1405ZSTRL-7PPBF IRF1405ZS-7PPBF |
120 A, 55 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263CA LEAD FREE, PLASTIC PACKAGE- 7
120 A, 55 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, D2PAK-7
120 A, 55 V, 0.0049 ohm, N-CHANNEL, Si, POWER, MOSFET D2PAK-7
|
Analog Devices, Inc.
International Rectifier, Corp.
ITT, Corp.
|
| STB180N10F3 STP180N10F3 |
N-channel 100 V, 4.0 mヘ, 120 A STripFET⑩ Power MOSFET D2PAK, TO-220
N-channel 100 V, 4.0 mΩ, 120 A STripFET?/a> Power MOSFET D2PAK, TO-220
N-channel 100 V, 4.0 m楼?, 120 A STripFET垄芒 Power MOSFET D2PAK, TO-220
N-channel 100 V, 4.0 mΩ, 120 A STripFET Power MOSFET D2PAK, TO-220
|
STMicroelectronics
|
| DT18F08KDL-A DT18F08KSB-A DT18F08KDB-A DT18F08KEL- |
40 A, 800 V, SCR MODULE-5
100 A, 800 V, SCR
120 A, 1100 V, SCR
120 A, 1200 V, SCR
120 A, 1300 V, SCR
120 A, 1000 V, SCR
|
|
| 2SK2753-01 |
N-channel MOS-FET 50 A, 120 V, 0.032 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| IXTT120N15P IXTQ120N15P |
120 A, 150 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
N-Channel Enhancement Mode
|
IXYS CORP
IXYS Corporation
|
| C9732DK-11-15 |
For soft X-ray imaging, cassette type with USB 2.0 interface Large photodiode area: 120 x 120 mm
|
Hamamatsu Corporation
|
| MIXA80W1200TED |
120 A, 1200 V, N-CHANNEL IGBT
|
IXYS CORP
|
| EPS13D2C1HG-120.000M |
OSCILLATORS 100PPM -20 70 3.3V 4 120.000MHZ TS CMOS 5X7MM 4PAD SMD CRYSTAL OSCILLATOR, CLOCK, 120 MHz, LVCMOS OUTPUT
|
Ecliptek, Corp.
|
| EH2700TTS-120.000M |
OSCILLATORS 100PPM 0 70 2.5V 4 120.000MHZ TS CMOS 7.0X5.0 4PAD SMD CRYSTAL OSCILLATOR, CLOCK, 120 MHz, LVCMOS OUTPUT
|
Ecliptek, Corp.
|
| NVMFS5832NL NVMFS5832NLT1G NVMFS5832NLT3G NVMFS583 |
Power MOSFET 40 V, 4.2 m, 120 A, Single N.Channel
|
ON Semiconductor
|
| ZDT694TA |
0.5 A, 120 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR SM-8, 8 PIN
|
Diodes, Inc.
|
|
