| PART |
Description |
Maker |
| N275CH04 N275CH04LOO N275CH04KOO N275CH04HOO N275C |
769.3 A, 400 V, SCR, TO-200AB
5565.65 A, 400 V, SCR
1640.65 A, 600 V, SCR, TO-200AC
36.11 A, 1200 V, SCR, TO-48
2614.05 A, 1400 V, SCR
3799.4 A, 3400 V, SCR
2610.91 A, 2600 V, SCR
133.45 A, 800 V, SCR
4474.5 A, 4200 V, SCR
3925 A, 4500 V, SCR
3925 A, 4400 V, SCR
2692.55 A, 1600 V, SCR
70.65 A, 200 V, SCR, TO-65
3595.3 A, 400 V, SCR
3595.3 A, 200 V, SCR
4003.5 A, 2800 V, SCR
1428.7 A, 1800 V, SCR, TO-200AC
1428.7 A, 1600 V, SCR, TO-200AC
612.3 A, 1600 V, SCR
32.97 A, 1000 V, SCR, TO-48
98.91 A, 1000 V, SCR, TO-65
|
Westcode Semiconductors, Ltd.
WESTCODE SEMICONDUCTORS LTD
|
| I20 180RKI20M |
Silicon Controlled Rectifier, 172 A, 200 V, SCR, TO-209AC
285 A, 200 V, SCR, TO-209AB
|
Vishay Semiconductors
|
| CR02AM-4 CR02AM CR02AM-6 CR02AM-8 |
0.47 A, 200 V, SCR, TO-92
0.47 A, 300 V, SCR, TO-92
LOW POWER USE PLANAR PASSIVATION TYPE
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| CS16-06GO2 CS5-06GO2 CS5-02GO2 CS112-12IO8 CS52-14 |
30 A, 600 V, SCR, TO-208AA
18.055 A, 600 V, SCR, TO-64
18.055 A, 200 V, SCR, TO-64
220 A, 1200 V, SCR, TO-209AC
120 A, 1400 V, SCR, TO-209AC
|
IXYS CORP
|
| IST110A-6 ISTF160-5F35 ISTF160-3F35 IST85-13 IST85 |
175 A, 600 V, SCR
355 A, 500 V, SCR
355 A, 300 V, SCR
175 A, 1300 V, SCR
175 A, 300 V, SCR
355 A, 200 V, SCR
355 A, 1000 V, SCR
|
|
| NTE5406 NTE5400 NTE5401 NTE5402 NTE5403 NTE5404 NT |
0.8 A, 200 V, SCR, TO-92
Silicon Controlled Rectifier (SCR) 0.8 Amp Sensitive Gate
|
NTE[NTE Electronics]
|
| 2N2323 JANTX2N2323 JANTX2N2323A JANTX2N2323AS JANT |
SILICON CONTROLLED RECTIFIER
SILICON CONTROLLED RECTIFIER 0.3454 A, 200 V, SCR, TO-5
SILICON CONTROLLED RECTIFIER 1.6 A, 200 V, SCR, TO-205AD
LED RED DIFFUSED 1.8X3.5MM RECT SCR, TO-39
|
MICROSEMI[Microsemi Corporation]
Microsemi, Corp.
|
| CS220-8N CS220-8B CS220-8D CS220-8M CENTRALSEMICON |
SILICON CONTROLLED RECTIFIER 8.0 AMP, 200 THRU 800 VOLTS 8 A, 600 V, SCR, TO-220AB
SILICON CONTROLLED RECTIFIER 8.0 AMP, 200 THRU 800 VOLTS 8 A, 800 V, SCR, TO-220AB
SILICON CONTROLLED RECTIFIER 8.0 AMP, 200 THRU 800 VOLTS 8 A, 200 V, SCR, TO-220AB
SILICON CONTROLLED RECTIFIER 8.0 AMP, 200 THRU 800 VOLTS 8 A, 400 V, SCR, TO-220AB
Leaded Thyristor SCR
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| 2N5064AP T107E141 S0510LS253V S1008LS253V EC103A75 |
0.8 A, 200 V, SCR, TO-92
4 A, 500 V, SCR
10 A, 50 V, SCR, TO-220AB
8 A, 100 V, SCR, TO-220AB
0.8 A, 100 V, SCR, TO-92
6 A, 50 V, SCR, TO-220AB
6 A, 100 V, SCR, TO-220AB
4 A, 300 V, SCR, TO-202AB
8 A, 50 V, SCR, TO-202AB
4 A, 50 V, SCR, TO-202AB
10 A, 100 V, SCR, TO-220AB
|
|
| FS1209DH FS1209BH FS1209MH FS1210BH |
Standard Gate SCRs
600 V, standard SCR
200 V, standard SCR
400 V, standard SCR
|
Fagor
|
| VSKT230-20 VSKT230-20PBF VSKT230-12PBF VSKT230-16 |
SCR/SCR and SCR/Diode (MAGN-A-PAK Power Modules), 230 A
|
Vishay Siliconix
|
| 2N5166 2N4147 2N1600 2N1598 2N893 2N899 |
20 A, 400 V, SCR
0.25 A, 100 V, SCR, TO-52
8 A, 50 V, SCR, TO-64
1.6 A, 300 V, SCR, TO-5
0.25 A, 15 V, SYMMETRICAL GTO SCR, TO-18
0.25 A, 100 V, GATE TURN-OFF SCR, TO-18
|
SEMITRONICS CORP
|
|
