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K4M28163PD-RS1L - 8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 CSP-54

K4M28163PD-RS1L_3873616.PDF Datasheet


 Full text search : 8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 CSP-54
 Product Description search : 8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 CSP-54


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PART Description Maker
TCS59SM716AFTL-80 TCS59SM716AFTL-70 TCS59SM716AFTL 2M×4Banks×16Bits Synchronous DRAM(4M×16位同步动态RAM)
8M×4Banks×4Bits Synchronous DRAM(4M×4位同步动态RAM)
4M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 4米4Banks × 8位同步DRAM米8位同步动态RAM)的
8M?4Banks?4Bits Synchronous DRAM(4缁?M?4浣??姝ュ???AM)
SYNCHRONOUS DRAM, PDSO54
Toshiba Corporation
Toshiba, Corp.
HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
x16 SDRAM x16内存
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN
Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes
CAP SMD 0805 .01UF 50V 5%
CONNECTOR ACCESSORY
From old datasheet system
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
MT48LC8M16LFTG-75ITG MT48LC8M16LFF4-75ITG MT48LC4M 8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 8 X 8 MM, VFBGA-54
4M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 8 X 13 MM, VFBGA-90
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
Qimonda AG
SMSC, Corp.
IS42SM32100C IS42RM32100C-6BLI 512K x32Bits x2Banks Low Power Synchronous DRAM
1M X 32 SYNCHRONOUS DRAM, 5.5 ns, PBGA90
Integrated Silicon Solution, Inc
INTEGRATED SILICON SOLUTION INC
HY5V26CF HY5V26CF-6 HY5V26CF-8 HY5V26CF-H HY5V26CF 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54
4 Banks x 2M x 16bits Synchronous DRAM
SDRAM - 128Mb
HYNIX SEMICONDUCTOR INC
M52S16161A-10TG M52S16161A-8BG 512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 9 ns, PDSO50
512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA60
Elite Semiconductor Memory Technology, Inc.
IS42VM16800F-75BLI SYNCHRONOUS DRAM, PBGA54
2M x 16Bits x 4Banks Mobile Synchronous DRAM
INTEGRATED SILICON SOLUTION INC
Integrated Silicon Solu...
M52D16161A-10TG 512K x 16Bit x 2Banks Synchronous DRAM 1M X 16 SYNCHRONOUS DRAM, 9 ns, PDSO50
Elite Semiconductor Memory Technology, Inc.
K4S511632D K4S511632D-KC K4S511632D-KC_L1H K4S5116 32M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL 12兆内00万16 × 4银行同步DRAM LVTTL
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
MT48LC4M16A2P-75 MT48LC4M16A2P-75LIT MT48LC16M4A2P 4M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 0.400 INCH, LEAD FREE, PLASTIC, TSOP2-54
16M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
Micron Technology, Inc.
 
 Related keyword From Full Text Search System
K4M28163PD-RS1L Characteristic K4M28163PD-RS1L ascel K4M28163PD-RS1L Mosfet K4M28163PD-RS1L Fixed K4M28163PD-RS1L rectifier
K4M28163PD-RS1L Hex K4M28163PD-RS1L vsen gate K4M28163PD-RS1L 电子元器件 K4M28163PD-RS1L Micropower K4M28163PD-RS1L buffer
 

 

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