PART |
Description |
Maker |
HYB25D256160BF-7 HYB25D256160BEL-7F |
16M X 16 DDR DRAM, 0.75 ns, PBGA60 16M X 16 DDR DRAM, 0.75 ns, PDSO66
|
INFINEON TECHNOLOGIES AG
|
V827316K04S V827316K04SXTG-B1 |
16M X 72 DDR DRAM MODULE, 0.8 ns, DMA184 2.5 VOLT 16M x 72 HIGH PERFORMANCE UNBUFFERED ECC DDR SDRAM MODULE
|
MOSEL-VITELIC MOSEL[Mosel Vitelic, Corp] Mosel Vitelic Corp
|
KM48L16031BT-GFZ/Y/0 KM416L8031BT-GFZ/Y/0 KM44L160 |
DDR SDRAM Specification Version 0.61 DDR SDRAM的规格版.61 16M X 8 DDR DRAM, 0.8 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
HYB25D128800T-7 HYB25D128800T-7.5 HYB25D128800TL-6 |
128Mb (16Mx8) DDR 266A (2-3-3) 128Mb (16Mx8) DDR 266B (2.5-3-3) 16M X 8 DDR DRAM, 0.7 ns, PDSO66 0.400 INCH, PLASTIC, TSOP2-66 16M X 8 DDR DRAM, 0.75 ns, PDSO66 0.400 INCH, PLASTIC, TSOP2-66
|
Infineon Technologies AG
|
AS4DDR16M72-8_ET AS4DDR16M72-8_IT AS4DDR16M72-8_XT |
16M X 72 DDR DRAM, 0.8 ns, PBGA219 16Mx72 DDR SDRAM iNTEGRATED Plastic Encapsulated Microcircuit
|
Austin Semiconductor
|
HY5DU561622ELTP-JI |
16M X 16 DDR DRAM, 0.7 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
A48P4616B |
16M X 16 Bit DDR DRAM
|
AMIC Technology
|
EDK2516CBBH-10-E |
16M X 16 DDR DRAM, 7 ns, PBGA60
|
ELPIDA MEMORY INC
|
W9412FADA-75 |
16M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
WINBOND ELECTRONICS CORP
|
HYMD116G725A8-H |
16M X 72 DDR DRAM MODULE, 0.75 ns, DMA184
|
HYNIX SEMICONDUCTOR INC
|
UPD48288118FF-EF25-DW1 |
16M X 18 DDR DRAM, PBGA144 18.50 X 11 MM, PLASTIC, FBGA-144
|
Bourns, Inc.
|
HY5RS123235FP-2 HY5RS123235FP-16 HY5RS123235FP-11 |
16M X 32 DDR DRAM, 0.25 ns, PBGA136 12 X 14 MM, LEAD FREE, FBGA-136
|
Hynix Semiconductor, Inc.
|