Part Number Hot Search : 
UF5400 LT44301 R15M03 E1C47 BD899A D1065 OL5200N BRY56
Product Description
Full Text Search

AM29LV008BT-70REF - Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes 1M X 8 FLASH 3V PROM, 70 ns, PDSO40

AM29LV008BT-70REF_3896766.PDF Datasheet


 Full text search : Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes 1M X 8 FLASH 3V PROM, 70 ns, PDSO40


 Related Part Number
PART Description Maker
AM29LV008BT-70REF AM29LV008BB-70REF Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:3V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes 1M X 8 FLASH 3V PROM, 70 ns, PDSO40
Spansion, Inc.
AM29F800BT-120ED AM29F800BB-70SD AM29F800BB-90SD A Flash Memory IC; Leaded Process Compatible:Yes; Memory Size:8Mbit; Package/Case:48-TSOP; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:120ns; Series:AM29 RoHS Compliant: Yes 512K X 16 FLASH 5V PROM, 120 ns, PDSO48
Flash Memory IC; Memory Size:8Mbit; Package/Case:44-SOIC; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:70ns; Series:AM29 RoHS Compliant: Yes 512K X 16 FLASH 5V PROM, 70 ns, PDSO44
Flash Memory IC; Memory Size:8Mbit; Package/Case:44-SOIC; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Supply Voltage Max:5V; Access Time, Tacc:90ns; Series:AM29 RoHS Compliant: Yes
512K X 16 FLASH 5V PROM, 90 ns, PBGA48
Spansion, Inc.
SPANSION LLC
E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 Intel StrataFlash Memory (J3) 英特StrataFlash存储器(J3
Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器(J3
Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56
Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器(J3
Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56
Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64
(TE28FxxxJ3C) Strata Flash Memory
Strata Flash Memory / 256 Mbit
Intel, Corp.
Intel Corp.
http://
Intel Corporation
AM29F080B-75SC Flash Memory IC; Memory Size:8Mbit; Memory Configuration:1M x 8; Package/Case:44-SOIC; Supply Voltage:5V; Access Time, Tacc:75ns; Mounting Type:Surface Mount 1M X 8 FLASH 5V PROM, 70 ns, PDSO44
Spansion, Inc.
W39V040FA W39V040FAT W39V040FAP W39V040FAQ 3.3-Volt Flash
NVM > Flash> FWH/LPC Flash Memory
512K X 8 CMOS FLASH MEMORY WITH FWH INERFACE
Winbond Electronics
WINBOND[Winbond]
CAT28F512HI-12T CAT28F512HI-15T CAT28F512HI-90T CA 512K-Bit CMOS Flash Memory
512 kb CMOS Flash Memory 64K X 8 FLASH 12V PROM, 120 ns, PDSO32
ON Semiconductor
S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI 4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64
64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56
2M X 16 FLASH 3V PROM, 100 ns, PBGA56
4M X 16 FLASH 3V PROM, 90 ns, PBGA64
Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes
4M X 16 FLASH 3V PROM, 90 ns, PDSO48
4M X 16 FLASH 3V PROM, 100 ns, PDSO48
Spansion, Inc.
SPANSION LLC
MB84VA2100 MB84VA2101-10 MB84VA2101 MB84VA2100-10 MCP (Multi-Chip Package) FLASH MEMORY & SRAM 16M (x 8) FLASH MEMORY & 2M (x 8) STATIC RAM
(MB84VA2100 / MB84VA2101) 16M (x 8) FLASH MEMORY & 2M (x 8) STATIC RAM
Fujitsu Microelectronics
FUJITSU[Fujitsu Media Devices Limited]
AT91FR40162SB-CU AT91FR40162SB AT91FR40162SBPRE AT Flash memory in a single compact 121-ball BGA package
1024K Words 16-bit Flash Memory (2M bytes)
ATMEL Corporation
LE28F4001M LE28F4001R LE28F4001R-15 LE28F4001R-20 4MEG (524288words x 8bit) flash memory
4 MEG (524288 words x 8 bits) Flash Memory
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
AM41DL16X4D AM41DL1614DT70IS SPANSIONLLC-AM41DL162 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA69
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
http://
ADVANCED MICRO DEVICES INC
SPANSION LLC
Advanced Micro Devices, Inc.
 
 Related keyword From Full Text Search System
AM29LV008BT-70REF mosfet AM29LV008BT-70REF bookmark AM29LV008BT-70REF SePIC AM29LV008BT-70REF mount AM29LV008BT-70REF driver
AM29LV008BT-70REF Level AM29LV008BT-70REF ac/dc eurocard AM29LV008BT-70REF Mosfet AM29LV008BT-70REF single cell AM29LV008BT-70REF mos
 

 

Price & Availability of AM29LV008BT-70REF

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.56640887260437