| PART |
Description |
Maker |
| PDTD113ZT PDTD113ZT215 PDTD113ZT-13 PDTD113ZT-15 |
NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm
NPN 500 mA, 50 V resistor-equipped transistor R1 = 1 kW, R2 = 10 kW
NPN 500 mA, 50 V resistor-equipped transistors; R1 = 1 kOhm, R2 = 10 kOhm; Package: SOT23 (TO-236AB); Container: Tape reel smd 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kW, R2 = 10 kW
|
NXP Semiconductors N.V.
|
| BUX98AF BUX98AFR1 |
30 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-204AE
Bipolar NPN Device in a Hermetically sealed TO3
|
SEMELAB LTD
Seme LAB
|
| Q67000-A5066 TDA4605-3 TDA46053 |
PWM Control IC for SMPS using MOS-Tra...
Control IC for Switched-Mode Power Supplies using MOS-Transistor
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 2SC332507 2SC3325 2SC3325-YTE85LF |
500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Power Amplifier Applications
|
Toshiba Semiconductor
|
| 2N1890 JAN2N1890S JAN2N1711S JANTX2N1711 |
NPN LOW POWER SILICON TRANSISTOR
NPN Transistor
500 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5
|
Microsemi Corporation
MICROSEMI CORP-LAWRENCE
|
| 2SC4258 |
10 A, 500 V, NPN, Si, POWER TRANSISTOR
|
PANASONIC CORP
|
| MJW16206 ON2059 |
POWER TRANSISTORS 12 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-247AE
High and Very High Resolution CRT Monitors
From old datasheet system
|
ON Semiconductor
|
| ZAPD-21 ZAPD-21-N |
500 MHz - 2000 MHz RF/MICROWAVE COMBINER, 1 dB INSERTION LOSS ROHS COMPLIANT, CASE F14
Power Splitter/Combiner 2 Way-0 50ヘ 500 to 2000 MHz
Power Splitter/Combiner 2 Way-0 50惟 500 to 2000 MHz
Power Splitter/Combiner 2 Way-0 50Ω 500 to 2000 MHz
|
Mini-Circuits
|
| BUJ301A |
Silicon Diffused Power Transistor 0.5 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| CDD2061D CDD2061 |
2.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 60 - 500 hFE.
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-220AB 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）| TO - 220AB现有
|
Continental Device India Limited
|
| BSS73CSM BSS73CSM-QR-B |
Bipolar NPN Device in a Hermetically sealed LCC1
500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Seme LAB
SEMELAB LTD
|
|
