| PART |
Description |
Maker |
| IS43DR16160A-37CBL |
16M X 16 DDR DRAM, 0.5 ns, PBGA84
|
INTEGRATED SILICON SOLUTION INC
|
| HY5PS56821LF-C4 HY5PS56821LF-C5 HY5PS56821LF-E3 HY |
256Mb DDR2 SDRAM
64M X 4 DDR DRAM, PBGA60
16M X 16 DDR DRAM, PBGA84
|
HYNIX SEMICONDUCTOR INC
|
| HYMR16418H-850 HYMR13218H-840 HYMR14818H-840 HYMR1 |
64M X 18 RAMBUS MODULE, 50 ns, DMA184 RIMM-184
32M X 18 RAMBUS MODULE, 40 ns, DMA184 RIMM-184
48M X 18 RAMBUS MODULE, 40 ns, DMA184 RIMM-184
32M X 16 RAMBUS MODULE, 53 ns, DMA184
32M X 16 RAMBUS MODULE, 40 ns, DMA184
32M X 16 RAMBUS MODULE, 45 ns, DMA184
32M X 18 RAMBUS MODULE, 45 ns, DMA184
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| TC58128DC |
128M Bit (16M×8Bits ) CMOS NAND EEPROM(16M×8CMOS与非EEPROM)
|
Toshiba Corporation
|
| IBM13M16734JCA |
16M x 72 1 Bank Registered/Buffered SDRAM Module(16M x 72 1组寄缓冲同步动态RAM模块16M x 72高速存储器阵列结构
|
IBM Microeletronics
|
| MX25L1605ZM MX25L1605ZMC-20 MX25L1605ZMC-20G MX25L |
16M-BIT [x 1] CMOS SERIAL eLiteFlashTM MEMORY 16M X 1 FLASH 2.7V PROM, DSO8
|
Macronix International Co., Ltd.
|
| TC58NS128ADC |
128-MBIT (16M x 8 BITS) CMOS NAND E PROM (16M BYTE SmartMedia )
|
TOSHIBA
|
| TH58V128DC |
128 Mbit (16M x 8bit) CMOS NAND E2PROM (16M BYTE SmartMedia)
|
Toshiba Semiconductor
|
| MX25L1602 MX25L1602MC-50 |
16M-BIT [16M x 1] CMOS SERIAL FLASH EEPROM
|
Macronix International
|
| MC-4R128FKK6K-840 MC-4R128FKK6K |
128MB 32-bit Direct Rambus DRAM RIMM Module 64M X 16 DIRECT RAMBUS DRAM MODULE, DMA232
128MB 32-bit Direct Rambus DRAM RIMM Module
|
Elpida Memory, Inc.
ELPIDA[Elpida Memory]
|
| V436416S04VTG |
3.3 Volt 16M x 64 High Performance PC100 and 100 MHZ SDRAM Module with Unbuffered(3.3V 16M*64位高性能无缓冲器PC10000MHZSDRAM模块) 3.3伏特16米x 64高性能00兆赫PC100的内存模块，缓冲.3 1,600 * 64位高性能无缓冲器PC100的和100MHZSDRAM模块
|
Mosel Vitelic, Corp.
|
