| PART |
Description |
Maker |
| IXFN38N100Q2 |
N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr 38 A, 1000 V, N-CHANNEL, Si, POWER, MOSFET
Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| FS70UMJ-06 |
Power MOSFETs: FS Series, Low Voltage, 60V
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
|
| FS50VSJ-3 |
Power MOSFETs: FS Series, Low Voltage, 150V for High-Speed Switching Use
|
Mitsubishi Electric Corporation
|
| IXFX38N80Q2 IXFK38N80Q2 IXFN38N80Q2 |
Discrete MOSFETs: HiPerFET Power MOSFETS
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q Low intrinsic R
|
IXYS[IXYS Corporation]
|
| IRF420-423 IRF421 IRF422 IRF423 IRF822 MTP2N45 IRF |
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V N沟道功率MOSFET.0甲，450 V/500 V
Circular Connector; Body Material:Plastic; Series:Trident TNM Series; Connector Shell Size:14; For Use With:Neptune Circular Connectors
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| SPB08P06P SPP08P06P SPB08P06PSMD |
SIPMOS Power-Transistor
Low Voltage MOSFETs - Power MOSFET, -60V, D2PAK, RDSon = 0.30
Low Voltage MOSFETs - Power MOSFET, -60V, TO-220, RDSon = 0.30
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| FY12AAJ-03F |
Power MOSFETs: FY Series
|
Mitsubishi Electric Corporation
|
| FS5KM-9A |
Power MOSFETs: FL Series
|
Mitsubishi Electric Corporation
|
| FS2KM-12A |
Power MOSFETs: FL Series
|
Mitsubishi Electric Corporation
|
| FY5ACJ-03F |
Power MOSFETs: FY Series
|
Mitsubishi Electric Corporation
|
| FL14KM-9A |
Power MOSFETs: FL Series
|
Mitsubishi Electric Corporation
|
