| PART |
Description |
Maker |
| R1LP0108ESA-5SI R1LP0108ESF-7SR R1LP0108ESF-7SI R1 |
1Mb Advanced LPSRAM (128k word x 8bit)
|
Renesas Electronics Corporation
|
| R1LV0108ESP-5SIB0 R1LV0108ESP-5SIS0 R1LV0108ESP-5S |
1Mb Advanced LPSRAM (128k word x 8bit)
|
Renesas Electronics Corporation
|
| R1LP0108ESP-5SIB0 R1LP0108ESP-5SIS0 R1LP0108ESP-5S |
1Mb Advanced LPSRAM (128k word x 8bit)
|
Renesas Electronics Corporation
|
| R1LV0808ASB-7SI R1LV0808ASB-5SI |
8Mb Advanced LPSRAM (1024k word x 8bit)
|
Renesas Electronics Corporation
|
| R1WV3216R08 R1WV3216RBG-8SI R1WV3216RBG-8SR R1WV32 |
32Mb Advanced LPSRAM (2M wordx16bit)
|
Renesas Electronics Corporation
|
| MT55L128L18F1 |
128K x 18, 3.3V I/O,ZBT SRAM(2Mb,3.3V输入/输出，静态RAM)
|
Micron Technology, Inc.
|
| K6F2016U4G K6F2016U4G-F K6F2016U4G-FF55 K6F2016U4G |
2Mb(128K x 16 bit) Low Power SRAM
|
http://
SAMSUNG[Samsung semiconductor]
|
| CXK5T81000ATM/AYM/AM-12LLX CXK5T81000ATM/AYM/AM-10 |
128K X 8 STANDARD SRAM, 120 ns, PDSO32
128K X 8 STANDARD SRAM, 100 ns, PDSO32
131072-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
| CY7C1423JV18-250BZXC |
36-Mbit DDR-II SIO SRAM 2-Word Burst Architecture; Architecture: DDR-II SIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 2M X 18 DDR SRAM, 0.45 ns, PBGA165
|
Cypress Semiconductor, Corp.
|
| TE28F160B3B120 TE28F160B3-B120 TE28F160B3B150 TE28 |
SMART 3 ADVANCED BOOT BLOCK WORD-WIDE
|
INTEL[Intel Corporation]
|
| UPD4264405G5-A50-7JD UPD4265405G5-A50-7JD UPD42S65 |
2-Mbit (128K x 18) Flow-Through SRAM with NoBL™ Architecture
x4 EDO Page Mode DRAM
512K (32K x 16) Static RAM
36-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency)
128K x 8 Static RAM 128K的8静态RAM
|
Omron Electronics, LLC
|
| CXK5T81000ATN/AYN-10LLX CXK5T81000ATN/AYN-12LLX CX |
128K X 8 STANDARD SRAM, 120 ns, PDSO32 8 X 13.40 MM, PLASTIC, TSOP-32
128K X 8 STANDARD SRAM, 100 ns, PDSO32 8 X 13.40 MM, PLASTIC, TSOP-32
131072-word x 8-bit High Speed CMOS Static RAM
|
Electronic Theatre Controls, Inc.
SONY
|
