Part Number Hot Search : 
04030 SC2432 BA8272FV MM3Z20V HMC284 1812L035 STN3PF06 180N0
Product Description
Full Text Search

CEB3120 - N-Channel Enhancement Mode Field Effect Transistor

CEB3120_4185234.PDF Datasheet

 
Part No. CEB3120 CEP3120
Description N-Channel Enhancement Mode Field Effect Transistor

File Size 297.67K  /  4 Page  

Maker

CET



JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: CEB4060
Maker: CET
Pack: TO-263
Stock: Reserved
Unit price for :
    50: $0.19
  100: $0.18
1000: $0.17

Email: oulindz@gmail.com

Contact us

Homepage
Download [ ]
[ CEB3120 CEP3120 Datasheet PDF Downlaod from Datasheet.HK ]
[CEB3120 CEP3120 Datasheet PDF Downlaod from Maxim4U.com ] :-)


[ View it Online ]   [ Search more for CEB3120 ]

[ Price & Availability of CEB3120 by FindChips.com ]

 Full text search : N-Channel Enhancement Mode Field Effect Transistor


 Related Part Number
PART Description Maker
ARF448B ARF448A ARF448 N-CHANNEL ENHANCEMENT MODE
RF POWER MOSFETs N- CHANNEL ENHANCEMENT MODE 150V 250W 65MHz
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
STW5NA100 5367 STH5NA100FI STH5NA100 OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N - CHANNEL ENHANCEMENT MODE, POWER MOS TRANSISTORS
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
From old datasheet system
N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式快速功率MOS晶体 N沟道增强模式功率MOS晶体管(不适用沟道增强模式快速功率马鞍山晶体管)
ST Microelectronics
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
AP15P15GM-HF AP15P15GM-HF14 P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
2.7 A, 140 V, 0.18 ohm, P-CHANNEL, Si, POWER, MOSFET HALOGEN FREE AND ROHS COMPLIANT, SOP-8
Advanced Power Electronics Corp.
Advanced Power Electronics, Corp.
IRF82 IRF822 IRF82FI IRF822FI -IRF82 IRF820FI N-channel enhancement mode power MOS transistor, 500V, 2.2A
N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS
SGS Thomson Microelectronics
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
LS4D18-270-RN LS4D18-3R3-RN LS4D18-560-RN LS4D18-2 Single N-Channel & P-Channel MOSFET Pair, Enhancement Mode, 8L PDIP 1 ELEMENT, 3.3 uH, GENERAL PURPOSE INDUCTOR, SMD
10.0mV Dual N-Channel Matched Pair MOSFET Array, Enhancement Mode, 8L CDIP 1 ELEMENT, 56 uH, GENERAL PURPOSE INDUCTOR, SMD
Surface Mount Power Inductors 1 ELEMENT, 2.7 uH, GENERAL PURPOSE INDUCTOR, SMD
10.0mV Dual P-Channel Matched Pair MOSFET Array, Enhancement Mode, 8L CDIP 1 ELEMENT, 8.2 uH, GENERAL PURPOSE INDUCTOR, SMD
Dual N-Channel Programmable Matched Pair MOSFET Array, Enhancement Mode, 8L PDIP, EPAD Enabled 1 ELEMENT, 22 uH, GENERAL PURPOSE INDUCTOR, SMD
Single N-Channel & P-Channel MOSFET Pair, Enhancement Mode, 8L MSOP
Single N-Channel & P-Channel MOSFET Pair, Enhancement Mode, 8L SOIC
http://
ICE Components, Inc.
ICE COMPONENTS INC
APM9988COC-TUL APM9988COC-TRL Dual N-Channel Enhancement Mode MOSFET 双N沟道增强型MOS
Dual N-Channel Enhancement Mode MOSFET 6 A, 20 V, 0.02 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MO-153AA
Anpec Electronics, Corp.
APM9968C APM9968COC-TR 20 V, N-channel enhancement mode MOSFET
N-Channel Enhancement Mode MOSFET N沟道增强型MOS
From old datasheet system
Anpec Electronics, Corp.
ANPEC[Anpec Electronics Coropration]
ANPEC Electronics Corporation
APT1001RBLC APT1001RSLC APT1001 POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
ZXMP3A16DN8TC ZXMP3A16DN8 ZXMP3A16DN8TA DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET 双P沟道增强型MOSFET0V
DUAL P-CHANNEL 30V ENHANCEMENT MODE MOSFET 4200 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
Zetex Semiconductor PLC
ZETEX[Zetex Semiconductors]
MTD3055VL MTD3055VLNL N-Channel Logic Level Enhancement Mode Field Effect Transistor 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
From old datasheet system
M-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
AP25P15GI14 AP25P15GI P-CHANNEL ENHANCEMENT MODE POWER MOSFET
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement
Advanced Power Electronics Corp.
 
 Related keyword From Full Text Search System
CEB3120 rectifier CEB3120 integrated gigabit CEB3120 Terminal CEB3120 Gate CEB3120 Pulse
CEB3120 transient design CEB3120 Fairchild CEB3120 vdd CEB3120 Module CEB3120 infineon
 

 

Price & Availability of CEB3120

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.49723505973816