| PART |
Description |
Maker |
| GS74108J GS74108TP |
512K x 8 4Mb Asynchronous SRAM
|
GSI Technology
|
| GS74116ATJ |
256K x 16 4Mb Asynchronous SRAM
|
GSI Technology
|
| GS840FH18AT-10 GS840FH18AT-10I GS840FH18AT-12 GS84 |
10ns 256K x 18 4Mb sync burst SRAM
12ns 256K x 18 4Mb sync burst SRAM
8.5ns 256K x 18 4Mb sync burst SRAM
8ns 256K x 18 4Mb sync burst SRAM
10ns 128K x 32 4Mb sync burst SRAM
|
GSI Technology
|
| GS76024B-15I GS76024B-10 GS76024B-10I GS76024B-12 |
6Mb56K x 24Bit）Asynchronous SRAM(6M位（256K x 24位）异步静态RAM)
256K x 24 6Mb Asynchronous SRAM
|
GSI[GSI Technology]
|
| M68AF127BL55MC6 M68AF127BMC M68AF127B M68AF127BB M |
1Mbit 128K x8, 5V Asynchronous SRAM 1Mbit28K的8V的异步SRAM
AML22 Series, Electronic Control Pushbutton, Square, Standard Bezel, Lighted, 1 LED, DPDT, Momentary Action, Snap in panel mount
1 MBIT (128K X8) 5.0V ASYNCHRONOUS SRAM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M48T512V M48T512Y |
3.3V-5V 4Mbit (512Kb x 8) Timekeeper SRAM(4Mb TIMERKEEPEER SRAM)
|
意法半导
|
| N02L63W3AB25I N02L63W3AB5IT N02L63W3A |
2 Mb Ultra-Low Power Asynchronous CMOS SRAM
2 Mb, 3 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tape and Reel; Qty per Container: 2500 128K X 16 STANDARD SRAM, 70 ns, PBGA48
2Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 16bit
|
ON Semiconductor
|
| R1RW0408DGE-2PR R1RW0408D R1RW0408DGE-2LR |
4M High Speed SRAM (512-kword x 8-bit)
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| HM62W8511HCLJP-12 HM62W8511HC HM62W8511HCJP-10 HM6 |
Memory>Fast SRAM>Asynchronous SRAM
4M High Speed SRAM (512-kword x 8-bit)
BOX 5.0X1.85X1.0 W/CLP BLK
|
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
