PART |
Description |
Maker |
MAGX-002731-180L00 MAGX-002731-SB3PPR |
GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 180W Peak, 300us Pulse, 10% Duty
|
M/A-COM Technology Solutions, Inc.
|
MAGX-002731-SB2PPR MAGX-002731-100L00 MAGX-002731- |
GaN HEMT Pulsed Power Transistor 2.7 - 3.1 GHz, 100W Peak, 500us Pulse, 10% Duty Cycle
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solu...
|
CGHV1J070D |
70 W, 18.0 GHz, GaN HEMT Die
|
Cree, Inc
|
CG2H80015D |
15 W, 8.0 GHz, GaN HEMT Die
|
Cree, Inc
|
CGH40035F-AMP |
35 W, RF Power GaN HEMT
|
Cree, Inc
|
TGI1314-50L |
MICROWAVE POWER GaN HEMT
|
Toshiba Semiconductor
|
MAGX-000035-045000-V1 |
GaN on SiC HEMT Pulsed Power Transistor
|
M/A-COM Technology Solution...
|
TGF2023-2-05-15 |
25 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
TGF2023-01-15 |
6 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
TGF2023-10-15 |
50 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
TGF2953 TGF2953-15 |
12 Watt Discrete Power GaN on SiC HEMT
|
TriQuint Semiconductor
|
GTVA261701FA-15 |
Thermally-Enhanced High Power RF GaN HEMT
|
Infineon Technologies A...
|