| PART |
Description |
Maker |
| 1214-55 |
55 W, 28 V, 1200-1400 MHz common base transistor
55 Watts - 28 Volts, Pulsed Radar 1200 - 1400 MHz
BJT
|
GHZTECH[GHz Technology]
|
| 1014-12 |
12 W, 28 V, 1000-1400 MHz common base transistor
12 Watt - 28 Volts, Class C Microwave 1000 - 1400 MHz
L BAND, Si, NPN, RF POWER TRANSISTOR
|
GHz Technology
List of Unclassifed Manufacturers
ETC[ETC]
|
| CGHV14500 CGHV14500F CGHV14500F-AMP CGHV14500F-TB |
500 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems
|
Cree, Inc
|
| 1214-300M |
300 Watts - 40 Volts, 150楼矛s, 10% Radar 1200 - 1400 MHz
300 Watts - 40 Volts, 150μs, 10% Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
| 1214-110M |
110 Watts - 50 Volts, 330μs, 10% Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
| 1214-220M |
220 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
|
ADPOW[Advanced Power Technology]
|
| 1214-300 |
300 Watts - 50 Volts, 100us, 10% Radar 1200 1400 MHz
|
ADPOW[Advanced Power Technology]
|
| MPS-173011-86 |
1400 MHz - 1700 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER HERMETIC
|
MicroWave Technology, Inc.
|
| TN9269 |
10 MHz - 1200 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
|
| PA195C |
1000 MHz - 1200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
|
| SA5200 SA5200D |
RF dual gain-stage 0 MHz - 1200 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
