PART |
Description |
Maker |
BLL6H1214-500 |
LDMOS L-band radar power transistor
|
NXP Semiconductors
|
BLS7G2933S-150 |
LDMOS S-Band radar power transistor
|
NXP Semiconductors N.V.
|
BLL1214-35 |
L-band radar LDMOS driver transistor
|
NXP Semiconductors
|
HVV1214-025 |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty for Ground Based Radar Applications L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
AM2729-110 2713 |
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS From old datasheet system
|
SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
0910-300M |
Bipolar/LDMOS Transistor 300 Watts - 50 Volts, 150us, 5% Radar 890 - 1000 MHz
|
Microsemi Corporation ADPOW[Advanced Power Technology]
|
AM83135-010 2710 |
Hook-Up Wire; Conductor Size AWG:20; No. Strands x Strand Size:10 x 30; Jacket Color:Black; Approval Bodies:UL, CSA; Approval Categories:UL AWM Style 1061, CSA Type AWM; Conductor Material:Copper RoHS Compliant: Yes From old datasheet system RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导 STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
|
AM80814-005 |
RF & Microwave Transistors L-Band Radar Applications(用于L波段雷达脉冲驱动的RF和微波晶体管) L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
|
意法半导 STMicroelectronics SGS Thomson Microelectronics
|
1214-550P |
550 Watts - 300楼矛s, 10%, 42V L-Band Pulsed Radar 1200 - 1400 MHz 550 Watts - 300μs, 10%, 42V L-Band Pulsed Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
MS2604 |
RF& MICROWAVE TRANSISTORS S BAND RADAR APPLICATIONS
|
Advanced Power Technology Ltd.
|