| PART |
Description |
Maker |
| IRFZ46N-002 E-018 IRF540N-006 IRF540N-004 IRF540N- |
46 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 48 A, 60 V, 0.023 ohm, N-CHANNE 81 A, 60 V, 0.012 ohm, N-CHANNE 27 A, 100 V, 0.052 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 72 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 98 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 21 A, 150 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 46 A, 100 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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Bourns, Inc. VISHAY INTERTECHNOLOGY INC
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| IXTP15N30MB IXTP15N30MA IXTH12N45MA IXTH15N35MB IX |
TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 15A I(D) | TO-220(5) TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 12A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 15A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 550V V(BR)DSS | 20A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 23A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 24A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 35A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 27A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 31A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 42A I(D) | TO-247(5) TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 15A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 42A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 35A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 12A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 11A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 17A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 650V V(BR)DSS | 18A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 21A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 21A I(D) | Z-PAC TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 15A I(D) | TO-220(5) TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 8A I(D) | TO-220(5) TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-220(5) TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 67A I(D) | Z-PAC 晶体管| MOSFET的| N沟道| 100V的五(巴西)直| 67A条(丁)|的Z -委员 TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 24A I(D) | Z-PAC 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 24A条(丁)|的Z -委员 TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 20A I(D) | Z-PAC 晶体管| MOSFET的| N沟道| 600V的五(巴西)直| 20A条(丁)|的Z -委员
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Ricoh Co., Ltd.
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| NIMD6302R2 |
HDPlus Dual N-Channel Self-Protected Field Effect Transistor with 1:200 Current Sense FET HDPlus Dual N-Channe Self-protected Field Effect Transistors with 1:200 Current Mirror FET
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ONSEMI[ON Semiconductor]
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| STD2N50 STD2N50-1 STD2N50T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2A I(D) | TO-252 晶体管| MOSFET的| N沟道| 500V五(巴西)直|甲(丁)|52 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR -通道增强型功率MOS器件 STD2N50-1 I-PAK MOSFET-TRANSIT N-CHANNEL MOSFET
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STMicroelectronics N.V. 意法半导 ST Microelectronics STMICROELECTRONICS[STMicroelectronics] SGS Thomson Microelectronics
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| 2SK2432 2SK2619 2SK2636 2SK2403 2SJ454 2SK2404 2SK |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 7A I(D) TRANSISTOR | MOSFET | P-CHANNEL | 250V V(BR)DSS | 5A I(D) TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 5A I(D) TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 16A I(D) 晶体管| MOSFET的| N沟道| 250V五(巴西)直| 16A条(丁) TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 6A I(D) | TO-262AA 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 6A条(丁)|62AA TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 20A I(D) 晶体管| MOSFET的| N沟道| 450V五(巴西)直| 20A条(丁) Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
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Sanyo Electric Co., Ltd.
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| OM6407SD OM6406SD OM6408SD OM6405SD |
TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 200V V(BR)DSS | 8A I(D) | FP TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) | FP TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 400V V(BR)DSS | 5.5A I(D) | FP 晶体管| MOSFET的|阵| N沟道| 400V五(巴西)直| 5.5AI(四)|计划生育 TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | FP 晶体管| MOSFET的|阵| N沟道| 100V的五(巴西)直| 8A条(丁)|计划生育
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Mitsubishi Electric, Corp.
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| OM6414SP3 OM6415SP3 OM6413SP3 OM6416SP3 |
TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 200V V(BR)DSS | 4A I(D) 晶体管| MOSFET功率模块| 3 - PH值大桥| 200伏五(巴西)直| 4A条(丁) TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 400V V(BR)DSS | 2.5A I(D) 晶体管| MOSFET功率模块| 3 - PH值大桥| 400V五(巴西)直| 2.5AI(四 TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 100V V(BR)DSS | 6A I(D) 晶体管| MOSFET功率模块| 3 - PH值大桥| 100V的五(巴西)直| 6A条(丁) TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 500V V(BR)DSS | 2A I(D) 晶体管| MOSFET功率模块| 3 - PH值大桥| 500V五(巴西)直|甲(丁)
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Samwha Electronics International Rectifier, Corp.
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| IRFPG22 IRFPE32 |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 1.5A I(D) | TO-247AC TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 3.4A I(D) | TO-247AC 晶体管| MOSFET的| N沟道| 800V的五(巴西)直| 3.4AI(四)|47AC
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Fairchild Semiconductor, Corp.
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| IRFU320A IRFR320A |
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.1A I(D) | TO-251AA TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.1A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 400V五(巴西)直| 3.1AI(四)|52AA
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| IRHN250 IRHN450 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18.5A I(D) | SMT TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | SMT 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 8A条(丁)|贴片
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Black Box, Corp.
|
| 2N5484 2N5485 2N5486 SST5484 SST5485 SST5486 |
High Frequency/General Purpose N-Channel JFETs MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:4.5A; Current, Idm pulse:-20A; Power, Pd:1.3W; Resistance, Rds on:0.04R; SMD:1; Charge, gate p MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:5.6A; Current, Idm pulse:-30A; Power, Pd:1.25W; Resistance, Rds on:0.025R; SMD:1; Charge, gate p
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Vishay Siliconix Vishay Intertechnology,Inc.
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