| PART |
Description |
Maker |
| V53C16258HK60 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
Murata Manufacturing Co., Ltd.
|
| GM71C4263DLJ-80 GM71C4263DT-70 GM71C4263DLT-70 GM7 |
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
LG, Corp.
|
| GM71C16160AJ-7 GM71CS16160ALJ-6 |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Electronic Theatre Controls, Inc.
|
| HY514170BSLRC-70 HY514170BTC-70 HY514170BSLTC-70 H |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Dialight PLC
|
| NN511666J-45 NN511663J-45 NN511666LJ-40 NN511663LJ |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Glenair, Inc.
|
| TMS44165L-80DGE TMS44165L-70DGE TMS44165L-10DGE TM |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
SCHURTER AG
|
| HY514260BJC-60 HY514260BLJC-60 HY514260BSLJC-60 HY |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Macronix International Co., Ltd.
|
| HM51W4260ALRR-10 HM51W4260ALRR-7 HM51W4260ALRR-8 H |
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
x16FastPageModeDRAM
|
|
| UPD42S17170LLE-A70 UPD42S17170LG5-A70-7KF UPD42S17 |
72-Mbit QDR™-II SRAM 2-Word Burst Architecture
x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Vishay Intertechnology, Inc.
|
| GM71C18163BT-8 GM71C18163BJ-6 GM71C18163BJ-8 GM71C |
1,048,576 words x 16 bit DRAM, 80ns, low power
1,048,576 words x 16 bit DRAM, 70ns, low power
1,048,576 words x 16 bit DRAM, 60ns, low power
x16 EDO Page Mode DRAM x16 EDO公司页面模式的DRAM
|
LG Semiconductor
|
| M5M465400DTP-6S M5M467400DTP-6S M5M465160DTP-5 M5M |
FAST PAGE MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM 快速页面模7108864位（16777216 - Word位）动态随机存储器
4M X 16 FAST PAGE DRAM, 50 ns, PDSO50
16M X 4 FAST PAGE DRAM, 50 ns, PDSO32
|
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
