| PART |
Description |
Maker |
| TIM5964-8UL |
HIGH POWER P1dB=39.5dBm at 5.9GHz to 6.4GHz
|
Toshiba Semiconductor
|
| TIM7785-25UL |
HIGH POWER P1dB=44.5dBm at 7.7GHz to 8.5GHz
|
Toshiba Semiconductor
|
| TIM7179-12UL |
HIGH POWER P1dB=41.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| TIM6472-8UL09 |
HIGH POWER P1dB=39.5dBm at 6.4GHz to 7.2GHz
|
Toshiba Semiconductor
|
| AWT6109 AWT6109M5P8 AWT6109_REV_2.2 |
From old datasheet system
KPCS CDMA 3.5V/28.5dBm Linear Power Amplifier Module
The AWT6109 is a 3.5V (3.0 V to 4.2 V) high efficiency, 3 stage amplifier module for Korean Band PCS handsets.
|
ANADIGICS, Inc.
Anadigics Inc
|
| TIM3742-8SL-341 |
IM3=-45 dBc at Pout= 28.5dBm Single Carrier Level
|
Toshiba Semiconductor
|
| ISR2800DESRH ISR2800DHURH ISR2800DHDRH ISR2805DHDR |
2-OUTPUT 2.5 W DC-DC REG PWR SUPPLY MODULE
Adj, Radiation hardened high-power, high efficiency DC-DC power converter
5V, Radiation hardened high-power, high efficiency DC-DC power converter
|
MS KENNEDY CORP
M.S. Kennedy Corp.
|
| RT9801APE RT9801BPE RT9801AGE RT9711CPB RT9711CPBG |
80mΩ, 1.5A/0.6A High-Side Power Switches with Flag
80m惟, 1.5A/0.6A High-Side Power Switches with Flag
80m楼?, 1.5A/0.6A High-Side Power Switches with Flag
80mヘ, 1.5A/0.6A High-Side Power Switches with Flag
User Programmable Micro-Power Voltage Detectors
|
Richtek Technology Corporation
|
| FD1500AV-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
600 A AC/DC CLAMP-ON DMM,TRMS RoHS Compliant: NA
HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| RFS1003 PRFS-1003-0009 PRFS-1003-0005 PRFS-1003-00 |
From old datasheet system
5.1-5.9 GHz U-NII Power Amplifier
The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 ...
|
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
