| PART |
Description |
Maker |
| 1N5223BT50R 1N5231BTR 1N5231BT26A 1N5231BT50A 1N52 |
surface mount silicon Zener diodes 6.2 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
16V, 0.5W Zener Diode
33V, 0.5W Zener Diode
12V, 0.5W Zener Diode
13V, 0.5W Zener Diode
10V, 0.5W Zener Diode
25V, 0.5W Zener Diode
22V, 0.5W Zener Diode
30V, 0.5W Zener Diode
15V, 0.5W Zener Diode
27V, 0.5W Zener Diode
6.8V, 0.5W Zener Diode
11V, 0.5W Zener Diode
6.0V, 0.5W Zener Diode
4.7V, 0.5W Zener Diode
8.7V, 0.5W Zener Diode
6.2V, 0.5W Zener Diode
8.2V, 0.5W Zener Diode
9.1V, 0.5W Zener Diode
7.5V, 0.5W Zener Diode
4.3V, 0.5W Zener Diode
3.9V, 0.5W Zener Diode
3.6V, 0.5W Zener Diode
2.4V, 0.5W Zener Diode
3.3V, 0.5W Zener Diode
5.6V, 0.5W Zener Diode
5.1V, 0.5W Zener Diode
2.7V, 0.5W Zener Diode
14V, 0.5W Zener Diode
18V, 0.5W Zener Diode
20V, 0.5W Zener Diode
24V, 0.5W Zener Diode
19V, 0.5W Zener Diode
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Fairchild Semiconductor, Corp.
|
| IN4736A IN4732A IN4739A IN4748A IN4733A IN4757A IN |
Zeners
51V, 1W Zener Diode
1 Watt Zeners
(IN4728A ~ IN4764A) Zeners
Zeners 齐纳基准
5.1V, 1W Zener Diode
5.6V, 1W Zener Diode
3.3V, 1W Zener Diode
4.3V, 1W Zener Diode
7.5V, 1W Zener Diode
9.1V, 1W Zener Diode
8.2V, 1W Zener Diode
6.2V, 1W Zener Diode
4.7V, 1W Zener Diode
3.6V, 1W Zener Diode
3.9V, 1W Zener Diode
22V, 1W Zener Diode
43V, 1W Zener Diode
6.8V, 1W Zener Diode
16V, 1W Zener Diode
20V, 1W Zener Diode
13V, 1W Zener Diode
30V, 1W Zener Diode
18V, 1W Zener Diode
47V, 1W Zener Diode
36V, 1W Zener Diode
10V, 1W Zener Diode
56V, 1W Zener Diode
33V, 1W Zener Diode
15V, 1W Zener Diode
39V, 1W Zener Diode
11V, 1W Zener Diode
27V, 1W Zener Diode
12V, 1W Zener Diode 12 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
30 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41
24V, 1W Zener Diode
COLOR BAND DENOTES CATHODE
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http://
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
|
| TC74AC164P07 TC74AC164F TC74AC164FN TC74AC164FT |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 25.10 to 28.90; Condition Iz at Vz (mA): 2; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.80 to 3.20; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 23.72 to 24.78; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 2.80 to 3.05; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 24.54 to 25.57; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
CMOS Digital Integrated Circuit Silicon Monolithic 8-Bit Shift Register (S-IN, P-OUT)
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Toshiba Corporation
Toshiba Semiconductor
|
| CRS0506 CRS05 |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.06 to 7.84; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK 开关电源的应用
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.06 to 7.36; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 7.06 to 7.84; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD
Switching Mode Power Supply Applications
|
Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
|
| UT2316L-AE3-R UT2316-AE3-R |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.86 to 6.53; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MPAK N沟道增强模式
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.86 to 6.12; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 5.86 to 6.53; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MPAK
N-CHANNEL ENHANCEMENT MODE
|
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
|
| MZ4624 MZ4619 MZ4626 MZ4620 MZ4623 MZ4616 MZ4622 M |
Zener diode, 500 mW, zener voltage 4.7V
Zener diode, 500 mW, zener voltage 3V
Zener diode, 500 mW, zener voltage 5.6V
Zener diode, 500 mW, zener voltage 3.3V
Zener diode, 500 mW, zener voltage 4.3V
Zener diode, 500 mW, zener voltage 2.2V
Zener diode, 500 mW, zener voltage 3.9V
Zener diode, 500 mW, zener voltage 2.4V
Zener diode, 500 mW, zener voltage 10V
Low voltage avalanche passivated silicon oxide zener regulator diodes, 500 mW, zener voltage 6.8V
500 milliwatts glass silicon zener diode, zener voltage 22V
500 milliwatts glass silicon zener diode, zener voltage 51V
500 mW DO-35 Glass Zener Voltage Regulator Diodes
500 milliwatts glass silicon zener diode, zener voltage 62V
500 milliwatts glass silicon zener diode, zener voltage 33V
Low voltage avalanche passivated silicon oxide zener regulator diodes, 500 mW, zener voltage 8.2V
Zener diode, 500 mW, zener voltage 2V
Zener diode, 500 mW, zener voltage 8.2V
Zener diode, 500 mW, zener voltage 8.7V
Zener diode, 500 mW, zener voltage 9.1V
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Motorola
|
| 1N4701-TAPE 1N4704C 1N4704A 1N4712D 1N4712C 1N4709 |
Diode Zener Single 14V 5% 500mW 2-Pin DO-35 Ammo
Diode Zener Single 17V 2% 500mW 2-Pin DO-35
Diode Zener Single 17V 5% 2-Pin DO-7
Diode Zener Single 28V 1% 500mW 2-Pin DO-35
Diode Zener Single 28V 2% 500mW 2-Pin DO-35
Diode Zener Single 24V 1% 500mW 2-Pin DO-35
Diode Zener Single 18V 1% 500mW 2-Pin DO-35
Diode Zener Single 15V 1% 500mW 2-Pin DO-35
Diode Zener Single 18V 2% 500mW 2-Pin DO-35
Diode Zener Single 22V 1% 500mW 2-Pin DO-35
Diode Zener Single 25V 1% 500mW 2-Pin DO-35
Diode Zener Single 13V 1% 500mW 2-Pin DO-35
Diode Zener Single 3V 1% 500mW 2-Pin DO-35
Diode Zener Single 39V 1% 500mW 2-Pin DO-35
Diode Zener Single 5.6V 1% 500mW 2-Pin DO-35
Diode Zener Single 8.2V 1% 500mW 2-Pin DO-35
|
New Jersey Semiconductor
|
| STR751FR2T6 STR751FR2H6 STR755FR1H6 STR755FXX STR7 |
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 34.01 to 35.77; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 33.40 to 35.13; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 6.70 to 6.97; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 12.4 to 13.4; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: LLD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 3.47 to 3.68; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 29.68 to 31.22; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 31.49 to 33.11; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 32.79 to 34.49; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 36.00 to 37.85; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 30.32 to 31.88; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 29.02 to 30.51; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
Zener Diode; Application: General; Pd (mW): 400; Vz (V): 8.07 to 8.41; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
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意法半导
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| DF5A3.6CJE |
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 20.88 to 23.17; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: URP 二极管，不受ESD保护外延平面
Zener Diode; Application: General; Pd (mW): 200; Vz (V): 20.88 to 23.17; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: URP
Diodes for Protecting against ESD Epitaxial Planar Type
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Toshiba, Corp.
Toshiba Corporation
Toshiba Semiconductor
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