| PART |
Description |
Maker |
| 10N70-Q |
N-CHANNEL POWER MOSFE
|
Unisonic Technologies
|
| STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH
N-CHANNEL 3A - 600V D2PAK Power MESH IGBT
N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT
N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
|
ST Microelectronics
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A)
600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电
Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 600V电压的Rds（on）最大值\u003d 2.2ohm，身份证\u003d 3.6A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| FCPF22N60NT FCP22N60N |
N-Channel MOSFET 600V, 22A, 0.165W
600V N-Channel MOSFET, SupreMOS™; 3-TO-220 22 A, 600 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| FCA16N60N |
600V N-Channel MOSFET SupreMOS™; 3-TO-3PN 16 A, 600 V, 0.199 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel MOSFET 600V, 16A, 0.170W
|
Fairchild Semiconductor, Corp.
|
| IRFIBC40GLC IRFIBC40GLCPBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=3.5A)
|
IRF[International Rectifier]
|
| IRFB9N60 IRFB9N60APBF |
Power MOSFET(Vdss=600V/ Rds(on)=0.75ohm/ Id=9.2A)
600V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
International Rectifier
|
| FGB20N6S2D FGH20N6S2D FGB20N6S2DT FGP20N6S2D |
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth Diode
Switch Mode Power Supply; Output Power:300W; No. of Outputs:1; Output 1 VDC :5VDC; Output Current 1:60A; Power Supply Mounting:Chassis; Output Current:60A; Output Power Max:300W; Output Voltage:5VDC; Series:JWS RoHS Compliant: Yes
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
600V/ SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
600V, SMPS II Series N-Channel IGBT with Stealth Diode, TO-263/D2PAK Package
600V, SMPS II Series N-Channel IGBT with Anti-Parallel Stealth TM Diode
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| APT6040 APT6040BN APT6045BN |
POWER MOS IV 600V 18.0A 0.40 Ohm / 600V 17.0A 0.45 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| STH10NC60FI STW10NC60 STH10NC60 |
N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?┥I MOSFET
N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh?II MOSFET
N-CHANNEL 600V - 0.6 OHM - 10A - TO-247/ISOWATT218 POWERMESH MOSFET
N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMeshII MOSFET
N-CHANNEL Power MOSFET
N-CHANNEL Power MOS MOSFET
N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh⑩II MOSFET N沟道600V 0.6ohm - 10A TO-247/ISOWATT218 PowerMesh第二MOSFET的⑩
N-CHANNEL 600V - 0.6 OHM - 10A - TO-247/ISOWATT218 POWERMESH MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
STMicroelectronics N.V.
|
| STB3NC60 STB3NC60T4 STB3NC60-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-262AA
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-263AB
N - CHANNEL 600V - 3.3Ohm -3A-D 2 PAK/I 2 PAK PowerMESH II MOSFET
N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET
|
SGS Thomson Microelectronics
STMicroelectronics
意法半导
|
