| PART |
Description |
Maker |
| IS93C46-3 IS93C46-3G IS93C46-3GI IS93C46-3GR IS93C |
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM 1,024位串行电可擦除可编程ROM
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8
|
Integrated Silicon Solution, Inc.
ISSI[Integrated Silicon Solution, Inc]
Integrated Silicon Solution Inc
|
| IS93C46B IS93C46B-3GI IS93C46B-3GR IS93C46B-3G IS9 |
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM
|
http://
ISSI[Integrated Silicon Solution, Inc]
|
| IDT72V205L15TF IDT72V225L15TF IDT72V235L15TF |
3.3 VOLT CMOS SyncFIFO 256 x 18, 512 x 18, 1,024 x 18, 2,048 x 18, and 4,096 x 18
|
Integrated Device Techn...
|
| IDT72V845L15PF IDT72V845L20PF IDT72V805L15PFI IDT7 |
15MBaud CMOS logic optocoupler. Dual channel SOIC-8; Package: SOIC-W; No of Pins: 8; Container: Box
15MBaud CMOS logic optocoupler. Dual channel SOIC-8; Package: SOIC-W; No of Pins: 8; Container: Tape & Reel
8 Input, 6 Output Video Switch Matrix with Output Drivers; Package: TSSOP; No of Pins: 24; Container: Rail
3.3 VOLT CMOS DUAL SyncFIFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1,024 x 18, DUAL 2,048 x 18 3.3伏CMOS双SyncFIFO56 × 18，双512 × 18，双1,024 × 18，双2,048 × 18
|
Integrated Device Technology, Inc.
|
| BR93LC56FV BR93LC56RF BR93LC56F BR93LC56 A5800698 |
2,048-Bit Serial Electrically Erasable PROM
From old datasheet system
|
ROHM
|
| MSM512200L-80SJ MSM512200L-60SJ MSM512200L-60TS-K |
1,048,576-Word X 2-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 1,048,576字2位动态随机存储器：快速页面模式型
|
OKI SEMICONDUCTOR CO., LTD.
|
| MSM51V4400E MSM51V4400E-10 MSM51V4400E-70 |
1,048,576-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE 1,048,576字4位动态随机存储器：快速页面模式型
|
OKI SEMICONDUCTOR CO., LTD.
OKI electronic componets
|
| VG26S18165CJ-5 VG26S18165CJ-6 VG26V18165CJ-5 VG26V |
1,048,576 x 16 - Bit CMOS EDO DRAM
1,048,576 x 16 - Bit CMOS Dynamic RAM
|
VML[Vanguard International Semiconductor]
|
| GM71C18163CL-6 GM71C18163C GM71C18163CL-5 GM71C181 |
1,048,576 words x 16 bit CMOS DRAM, 60ns
1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM
|
HYNIX[Hynix Semiconductor]
|
| LTC1609 LTC1609ACSW LTC1609AISW LTC1609CG LTC1609C |
Round, Jacket Mass-Terminated Cable, 3659/40 28 AWG, .050 (1.27) 3-CH 16-BIT SUCCESSIVE APPROXIMATION ADC, SERIAL ACCESS, PDSO28
16-Bit, 200ksps, Serial ADC with Multiple Input Ranges
16-Bit, 200ksps, ADC, Serial Interface
16-Bit, 200ksps, Serial Sampling ADC
|
Linear Technology, Corp.
|
| AM29LV800T AM29LV800T-100 AM29LV800T-120 AM29LV800 |
8 Megabit (1,048,576 x 8-Bit/524,288 x 16-Bit) CMOS 3.0 Volt-only, Sectored Flash Memory
Am29LV800 - 8 Megabit (1.048.576 x 8-Bit/524.288 x 16-Bit) CMOS 3.0 Volt-only. Sectored Flash Memory
8 Megabit (1/048/576 x 8-Bit/524/288 x 16-Bit) CMOS 3.0 Volt-only/ Sectored Flash Memory
512K X 16 FLASH 3V PROM, 100 ns, PDSO48
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
SPANSION LLC
|
