| PART |
Description |
Maker |
| FSEZ1216B FSEZ1216BNY |
Primary Side Regulation PWM Integrated Power MOSFET; Package: 8-DIP; Container: Rail SMALL SIGNAL, FET, MS-001BA
Primary-Side-Regulation PWM Integrated Power MOSFET
|
Fairchild Semiconductor, Corp.
|
| NUS5530MNR2G |
Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor 3.9 A, 20 V, 0.083 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Jewel Hill Electronic Co., Ltd.
|
| 2SK956 2SK1010 2SK1507-01 2SK958 2SK1547-01 2SK138 |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4A I(D) | TO-247 晶体管| MOSFET的| N沟道| 800V的五（巴西）直| 4A条（丁）|47
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 6A条（丁）|20
TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3A I(D) | TO-247
MOSFET transistors
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 9A I(D) | TO-247
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
From old datasheet system
TRANSISTOR,MOSFET,N-CHANNEL,600V V(BR)DSS,9A I(D),TO-220
TRANSISTOR|MOSFET|N-CHANNEL|500VV(BR)DSS|6AI(D)|TO-220
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,9A I(D),TO-247
|
Toshiba, Corp.
Mallory Sonalert Products, Inc.
Fuji Semiconductors, Inc.
|
| STR5A164D |
Off-Line PWM Controllers with Integrated Power MOSFET
|
Sanken electric
|
| NTMFD4901NFT3G |
Dual N-Channel Power MOSFET with Integrated Schottky
|
ON Semiconductor
|
| STR-A6151M STR-A6169 |
Off-Line PRC Controllers with Integrated Power MOSFET
|
Sanken electric
|
| FSEZ1016A10 |
Primary-Side-Regulation PWM Integrated Power MOSFET
|
Fairchild Semiconductor
|
| NTLLD4901NF |
Power MOSFET and Integrated Schottky Diode, 30 V, Dual N-Channel
|
ON Semiconductor
|
| FSEZ1016A FSEZ1016AMY |
Primary-Side-Regulation PWM Integrated Power MOSFET
|
Fairchild Semiconductor
|
| FSEZ1317 FSEZ1317MY FSEZ1317NY |
Primary-Side-Regulation PWM with POWER MOSFET Integrated
|
Fairchild Semiconductor
|
| IRLZ24N-006 IRL530N-015PBF IRL530N-031PBF IRL2505- |
18 A, 55 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
15 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
104 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
120 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 100 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
39 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
61 A, 20 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
56 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
85 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
27 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
41 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 20 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
77 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc.
Vishay Intertechnology, Inc.
|
| 2SK3029 2SK3022 2SK3029TENTATIVE PANASONICCORPORAT |
Silicon N-Channel Power F-MOS FET 5000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
|
Panasonic, Corp.
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
|
