| PART |
Description |
Maker |
| R1LV0816ASD-5SI R1LV0816ASD-7SI |
8Mb Advanced LPSRAM (512k word x 16bit / 1M word x 8bit)
|
Renesas Electronics Corporation
|
| R1LV0816ASB-5SI R1LV0816ASB-7SI |
8Mb Advanced LPSRAM (512k word x 16bit)
|
Renesas Electronics Corporation
|
| R1WV6416RSD-5SI R1WV6416RSD-5SR R1WV6416RSD-7SI R1 |
64Mb Advanced LPSRAM (4M word x 16bit / 8M word x 8bit)
|
http://
Renesas Electronics Corporation
|
| R1LP0108ESA-5SI R1LP0108ESF-7SR R1LP0108ESF-7SI R1 |
1Mb Advanced LPSRAM (128k word x 8bit)
|
Renesas Electronics Corporation
|
| R1WV3216R08 R1WV3216RBG-8SI R1WV3216RBG-8SR R1WV32 |
32Mb Advanced LPSRAM (2M wordx16bit)
|
Renesas Electronics Corporation
|
| RMLV0408E-15 |
4Mb Advanced LPSRAM (512-kword × 8-bit)
|
Renesas Electronics Corporation
|
| GS88118 GS88136 GS88118GT-11IT GS88118GT-11.5IT GS |
512K x 18, 256K x 36 ByteSafe?/a> 8Mb Sync Burst SRAMs
512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
512K x 18, 256K x 36 ByteSafe8Mb Sync Burst SRAMs
8Mb锛?12K x 18Bit) ByteSafe Synchronous Burst SRAM(8M浣??512K x 18浣??ByteSafe??????RAM锛?甫2浣???插?????板?锛?
512K X 18 CACHE SRAM, 11.5 ns, PQFP100 TQFP-100
512K X 18 CACHE SRAM, 11 ns, PQFP100 TQFP-100
8Mb56K x 36Bit)ByteSafe Synchronous Burst SRAM(8M位（256K x 36位）ByteSafe同步静态RAM（带2位脉冲地址计数器）)
8Mb12K x 18Bit) ByteSafe Synchronous Burst SRAM(8M位（512K x 18位）ByteSafe同步静态RAM（带2位脉冲地址计数器）)
|
GSI Technology, Inc.
|
| TC55W800FT-70 |
512K Word x 16 Bit/1M Word x 8 Bit Full CMOS Static RAM(512K x 16 1M x 8 CMOS 静态RAM) 12k字16 Bit/1M字8位全部的CMOS静态RAM（为512k字16 100万字× 8位的CMOS静态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| TC554001FTL-85L TC554001FL-10L TC554001FTL-10L |
512K word x 8 Static RAM(512K x 8 静RAM) 12k字8静态存储器（为512k字8静态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| TC554001FTI-85L |
512K word x 8 Static RAM(512K x 8 静RAM)
|
Toshiba Corporation
|
