| PART |
Description |
Maker |
| CMLM2205 |
MULTI DISCRETE MODULESURFACE MOUNT SILICON SWITCHING NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE 600 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Central Semiconductor, Corp.
|
| CMLM7405 |
MULTI DISCRETE MODULE?/a> SURFACE MOUNT HIGH CURRENT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE⑩ SURFACE MOUNT HIGH CURRENT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE??SURFACE MOUNT HIGH CURRENT LOW VCE (SAT) SILICON NPN TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
|
CENTRAL[Central Semiconductor Corp]
|
| SSM5H16TU |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (N-ch SBD)
|
Toshiba Semiconductor
|
| 30BF..SERIES 30BF80 30BF10 30BF20 30BF40 30BF60 30 |
DIODE 3 A, SILICON, RECTIFIER DIODE, DO-214AB, Rectifier Diode
SURFACE MOUNTABLE ULTRAFAST RECOVERY DIODE 表面贴装超快恢复二极
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
800V 3A Ultra-Fast Discrete Diode in a SMC package
400V 3A Ultra-Fast Discrete Diode in a SMC package
600V 3A Ultra-Fast Discrete Diode in a SMC package
100V 3A Ultra-Fast Discrete Diode in a SMC package
200V 3A Ultra-Fast Discrete Diode in a SMC package
|
International Rectifier, Corp.
IRF[International Rectifier]
VISHAY SEMICONDUCTORS
|
| HN7G02FU |
Multi Chip Discrete Device Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application.
|
TOSHIBA
|
| 2SJ211 2SJ211-T2B 2SJ211-L 2SJ211-T1B |
P-CHANNEL MOS FET FOR SWITCHING
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0621-7 00; No. of Positions: 8; Connector Type: Panel
|
NEC[NEC]
NEC Corp.
|
| HI1-774J5 HI3-674ALD5 HI3-674ATD/883 HI1-774AK5 HI |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 536-0525-5 91; Contact Mating Area Plating: Gold
Converter IC 转换IC
Converter IC 转换器IC
|
Rochester Electronics, LLC
Intersil, Corp.
|
| 18TQ045 18TQ045S 18TQ035S 18TQ 18TQ035 18TQ040 18T |
45V 18A Schottky Discrete Diode in a TO-220AC package
45V 18A Schottky Discrete Diode in a D2-Pak package
40V 18A Schottky Discrete Diode in a D2-Pak package
35V 18A Schottky Discrete Diode in a D2-Pak package
35V 18A Schottky Discrete Diode in a TO-220AC package
SCHOTTKY RECTIFIER
CAT6 SOL PC PVC YEL 2OFT PVC SOLID PATCH CORD
CAT6 SOL PC PVC YEL 30FT PVC SOLID PATCH CORD
DIODE 18 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB, PLASTIC, SMD-220, D2PAK-3, Rectifier Diode
40V 18A Schottky Discrete Diode in a TO-220AC package
|
IRF[International Rectifier]
Vishay Semiconductors
|
| IRGS14C40L IRGB14C40L IRGSL14C40L |
430V Low-Vceon Discrete IGBT in a TO-262 package
430V Low-Vceon Discrete IGBT in a D2-Pak package
430V Low-Vceon Discrete IGBT in a TO-220AB package
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| 8ETX06 8ETX06-1 8ETX06FP 8ETX06S |
600V 8A HyperFast Discrete Diode in a D2-Pak package
600V 8A HyperFast Discrete Diode in a TO-220 FullPack package
600V 8A HyperFast Discrete Diode in a TO-262 package
Hyperfast Rectifier
|
IRF[International Rectifier]
|
| SST39LF016 SST39LF016-90-4I-EI SST39VF016-90-4I-EI |
(SST39VF080 / SST39VF016 / SST39LF080 / SST39LF016) 8 Mbit / 16 Mbit (x8) Multi-Purpose Flash
7.6 mm(0.3 inch) Micro Bright Seven Segment Displays
CONNECTOR ACCESSORY
LED Light Bars
D52 - BACKSHELL ENVIRON EMI-RFI STRT MIL 2M X 8 FLASH 2.7V PROM, 70 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 3V PROM, 55 ns, PDSO40
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 3V PROM, 55 ns, PBGA48
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 2.7V PROM, 90 ns, PDSO40
64 Mbit (x16) Multi-Purpose Flash Plus 64兆位（x16）的多功能闪存加
64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 2.7V PROM, 70 ns, PDSO40
|
Silicon Storage Technology, Inc.
SILICON STORAGE TECHNOLOGY INC
|
