| PART |
Description |
Maker |
| W988D6FB |
(W988D2FB / W988D6FB) 256Mb Mobile LPSDR
|
Winbond
|
| KBE00S003M-D411 KBE00S003M |
1Gb NAND*2 256Mb Mobile SDRAM*2
From old datasheet system
1Gb NANDx2 256Mb Mobile SDRAMx2
|
SAMSUNG[Samsung semiconductor]
|
| W948D2FBJX5E W948D2FBJX5I W948D2FBJX6E W948D2FBJX6 |
256Mb Mobile LPDDR
|
Winbond
|
| KBE00S003M |
1Gb NAND*2 256Mb Mobile SDRAM*2
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KBE00F005A-D411 KBE00F005A |
512Mb NAND*2 256Mb Mobile SDRAM*2
|
SAMSUNG[Samsung semiconductor]
|
| HYB39S256160DCL-6 HYB39S256800DCL-6 HYB39S256800DC |
Polypropylene metallized tape wrap and epoxy filled - Snubber 256兆位同步DRAM
256 MBit Synchronous DRAM 256兆位同步DRAM
256M (16Mx16) PC133 3-3-3
256Mb (32Mx8) FBGA PC133 3-3-3
256Mb (16Mx16) FBGA PC133 3-3-3
256Mb (64Mx4) PC133 3-3-3
256Mb (64Mx4) FBGA PC133 3-3-3
256 MBit Synchronous DRAM
|
Infineon Technologies AG
Infineon Technologies A...
|
| HYS64D3202 HYS64D16000GDL-6-C HYS64D32020HDL-6-C H |
DDR SDRAM Modules - 256MB (32Mx64) PC2100 2-bank; Available 2Q04
DDR SDRAM Modules - 256MB (32Mx64) PC3200 2-bank; Available 2Q04
DDR SDRAM Modules - 256MB (32Mx64) PC2700 2-bank; Available 2Q04
200-Pin Small Outline Dual-In-Line Memory Modules
|
INFINEON[Infineon Technologies AG]
|
| MF1117V-2 |
From old datasheet system
FOR DIGITAL MOBILE TELEPHONE Rx
FOR DIGITAL MOBILE TELEPHONE, Rx
FOR DIGITAL MOBILE TELEPHONE / Rx
GIGATRUE 550 CAT6 PINK STRANDED BULK 250FT
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| HYB18L256160BCX-7.5 HYE18L256160BCX-7.5 |
DRAMs for Mobile Applications 256-Mbit Mobile-RAM 16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54
|
Qimonda AG
|
