| PART |
Description |
Maker |
| IXSP24N60B |
48 A, 600 V, N-CHANNEL IGBT, TO-220AB TO-220, 3 PIN
High Speed IGBT
|
IXYS, Corp.
IXYS Corporation
|
| IXSP10N60B2D1 IXSA10N60B2D1 |
High Speed IGBT with Diode 20 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| RJP6016JPE-15 |
600 V - 40 A- N Channel IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| STGB30V60DF STGWT30V60DF |
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
|
ST Microelectronics
|
| SGH80N60UFD SGH80N60UFDTU |
Discrete, High Performance IGBT with Diode
Ultrafast IGBT
240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness 80 A, 600 V, N-CHANNEL IGBT
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| STGWT80V60F STGFW80V60F |
Low thermal resistance
Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
|
STMicroelectronics
ST Microelectronics
|
| RJH60F5DPQ-A0-15 |
600 V - 40 A - IGBT High Speed Power Switching
|
Renesas Electronics Corporation
|
| STGW30NC60KD |
60 A, 600 V, N-CHANNEL IGBT, TO-247
30 A - 600 V - short circuit rugged IGBT
|
STMicroelectronics
|
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| MG600Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
TOSHIBA
|
| MG150Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor
Toshiba Corporation
|
