| PART |
Description |
Maker |
| STGWT60V60DF STGW60V60DF |
Trench gate field-stop IGBT, V series 600 V, 60 A very high speed
|
STMicroelectronics
|
| STGB30V60DF STGWT30V60DF |
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
|
ST Microelectronics
|
| STGW20V60DF STGWT20V60DF STGB20V60DF STGP20V60DF |
600 V, 20 A very high speed trench gate field-stop IGBT
Low thermal resistance
|
List of Unclassifed Manufacturers
List of Unclassifed Manufac...
STMicroelectronics
|
| SGH80N60UFD SGH80N60UFDTU |
Discrete, High Performance IGBT with Diode
Ultrafast IGBT
240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness 80 A, 600 V, N-CHANNEL IGBT
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| VIO50-06P1 VII50-06P1 VDI50-06P1 VID50-06P1 |
CONN/6 POS HDR SHRD SGL RA LK 42.5 A, 600 V, N-CHANNEL IGBT
IGBT Modules in ECO-PAC 2 42.5 A, 600 V, N-CHANNEL IGBT
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| STGW30NC60KD |
60 A, 600 V, N-CHANNEL IGBT, TO-247
30 A - 600 V - short circuit rugged IGBT
|
STMicroelectronics
|
| IXGT40N60B2 IXGH40N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
75 A, 600 V, N-CHANNEL IGBT, TO-268AA
HiPerFAST IGBT
|
IXYS Corporation
|
| MG200Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor
Mitsubishi Electric Semiconductor
Toshiba Corporation
|
| MG600Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
TOSHIBA
|
| IRG4PC50F IRG4PC50F-E |
70 A, 600 V, N-CHANNEL IGBT, TO-247AC
70 A, 600 V, N-CHANNEL IGBT, TO-247AD
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)
600V Fast 1-8 kHz Discrete IGBT in a TO-247AC package
|
IRF[International Rectifier]
|
