| PART |
Description |
Maker |
| MJB18004D2T4-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network D2PAK For Surface Mount POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS
|
ON Semiconductor
|
| SAMA5D3 ATSAMA5D31A-CU ATSAMA5D34A-CU ATSAMA5D33A- |
The Atmel SAMA5D3 series is a high-performance, power-efficient embedded MPU based on the ARM? Cortex?A5 processor, achieving 536 MHz with power consumption levels below 0.5 mW in low-power mode.
|
ATMEL Corporation
|
| MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network
|
ON Semiconductor
|
| 2N1651 2N1652 2N1653 |
DAP transistors are de-signed for efficient high current switching at high frequencies
|
New Jersey Semi-Conductor Products, Inc.
|
| HER25105 |
HIGH EFFICIENT
|
Vishay Siliconix
EIC discrete Semiconductors
|
| HER30105 |
HIGH EFFICIENT
|
EIC discrete Semiconductors
|
| HS5K HS5F HS5A HS5B HS5D |
Rectifier: High Efficient
|
Taiwan Semiconductor
|
| US1M US1F |
High Efficient Rectifier
|
Yangzhou yangjie electronic co., ltd
|
| HER1606PT HER1607PT HER1601PT HER1603PT |
Rectifier: High Efficient
|
Taiwan Semiconductor
|
| 10-FZ062TA015SM-P985D13 |
High-efficient rectifier
|
Vincotech
|
