PART |
Description |
Maker |
ST-4 |
MINI-NOISE DIODES 10 KHZ TO 3 GHZ 0.00001 GHz - 3 GHz, SILICON, NOISE DIODE
|
Micronetics, Inc.
|
MGA-665P8-BLK MGA-665P8-TR1 MGA-665P8 MGA-665P8-TR |
GaAs Enhancement-Mode PHEMT 0.5 6 GHz Low Noise Amplifier GaAs增强型PHEMT.56 GHz的低噪声放大 GaAs Enhancement-Mode PHEMT 0.5 - 6 GHz Low Noise Amplifier From old datasheet system MGA-665P8 · MGA-665P8 0.5-6GHz Low Noise Amplifier
|
Avago Technologies, Ltd. Agilent(Hewlett-Packard) Agilent (Hewlett-Packard)
|
TMT-4-2002 |
Temperature Compensated Low Noise Amplifier 2 GHz - 4 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
PE15A1004 |
3 dB NF, 13 dBm, 12 GHz to 18 GHz, Low Noise Amplifier
|
Pasternack Enterprises, Inc.
|
CLA-18-6005 |
Low Noise Amplifier 6 GHz - 18 GHz
|
Teledyne Technologies Incorporated.
|
TLA-8-2014 |
Low Noise Amplifier 2 GHz - 8 GHz
|
Teledyne Technologies Incorporated.
|
PE15A1002 |
2 dB NF, 20 mW, 4 GHz to 8 GHz, Low Noise Amplifier
|
Pasternack Enterprises, Inc.
|
TLA-13-6014 TLA-13-6012 TLA-13-6013 |
Low Noise Amplifier 6 GHz - 13 GHz
|
Teledyne Technologies Incorporated. TELEDYNE[Teledyne Technologies Incorporated]
|
TLA-8-2015 TLA-8-2014 |
Low Noise Amplifier 2 GHz - 8 GHz
|
Teledyne Technologies Incorporated. TELEDYNE[Teledyne Technologies Incorporated]
|
ATF-13100 ATF-13100-GP3 |
2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 浣??澹扮???? FET) 2-18 GHz Low Noise Gallium Arsenide FET(2-18 GHz 低噪声砷化镓 FET) 2-18 GHz的低噪声砷化镓场效应管(2-18 GHz的低噪声砷化镓场效应管)
|
HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
|
TSDF1920W |
25-GHz NPN RF transistors
very high power gain;
Very low-noise; 25 GHz Silicon NPN Planar RF Transistor
|
Vishay Intertechnology,Inc. Vishay Siliconix
|