| PART |
Description |
Maker |
| LP62S2048-I LP62S2048M-10LI LP62S2048M-10LLI LP62S |
CAP .01UF 50V CERAMIC MONO 5% 256K × 8位低电压CMOS的SRAM
CAP 1500PF 100V CERAMIC MONO 5% 256K × 8位低电压CMOS的SRAM
.10UF 100V 10% MONOLITH CERM CAP
CAP 10000PF 50V CERAMIC MONO 5%
256K X 8 BIT LOW VOLTAGE CMOS SRAM
|
AMIC Technology, Corp.
AMIC Technology Corporation
AMICC[AMIC Technology]
|
| V53C104D V53C104DP60L V53C104DP70 V53C104DP70L V53 |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
High Performance / Low Power 256k x 4 Bit / Fast Page Mode CMOS DRAM
|
MOSEL[Mosel Vitelic, Corp]
|
| V53C8258H V53C8258H35 V53C8258H40 V53C8258H45 V53C |
HIGH PERFORMANCE 256K X 8 EDO PAGE MODE CMOS DYNAMIC RAM
|
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| V53C832L30 |
HIGH PERFORMANCE 3.3 VOLT 256K X 32 EDO PAGE MODE CMOS DYNAMIC RAM
|
Mosel Vitelic, Corp.
|
| V53C104AK-100L |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM
|
Mosel Vitelic, Corp.
|
| V53C256A V53C256P80L V53C256XXXX |
(V53C256A Series) High Performance / Low Power 256k x 1-Bit Fast Page Mode CMOS DRAM
|
Vitelic
|
| AD547JH AD547LH AD547SCHIPS AD542 AD544 AD542LH AD |
Initial offset voltage: 2.0mV; high performance BiFET operational amplifier
Initial offset voltage: 1.0mV; high performance BiFET operational amplifier
High Performance,BiFET Operational Amplifiers(高性能,BiFET运算放大
High Performance, BiFET Operational Amplifiers OP-AMP, 500 uV OFFSET-MAX, 1 MHz BAND WIDTH, UUC
High Performance/ BiFET Operational Amplifiers
MLT Series Linear Position Transducer, 127,0 mm [5.0 in] Electrical Travel, 1.0 % Linearity, Item Number F38000105
, CAMERAS, MEMORY BACK-UP, PAGERS AND WATCHES RoHS Compliant: NA
|
ANALOG DEVICES INC
Analog Devices, Inc.
http://
|
| KM641003B |
256K x 4 Bit(with OE)High-Speed CMOS Static RAM(256K x 4 OE)高速CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| V53C8256H35 |
ULTRA-HIGH SPEED, 256K X 8 FAST PAGE MODE CMOS DYNAMIC RAM 超高速，256K × 8快速页面模式的CMOS动态随机存储器
|
Mosel Vitelic, Corp.
|
| K6R1004C1D K6R1004C1D-JC12 |
256K X 4 STANDARD SRAM, 12 ns, PDSO32
256K x 4 Bit (with /OE) High-Speed CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| CY3732VP352200AXC CY3764VP352200AXC CY37128VP35220 |
5V, 3.3V, ISR High-Performance CPLDs
5V, 3.3V, ISRHigh-Performance CPLDs EE PLD, 12 ns, PQFP44
5V, 3.3V, ISRHigh-Performance CPLDs EE PLD, 15 ns, PQFP208
EE PLD, 7.5 ns, PQFP208 PLASTIC, QFP-208
EE PLD, 15 ns, PQFP100 PLASTIC, TQFP-100
5V, 3.3V, ISRTM High-Performance CPLDs EE PLD, 12 ns, PQFP208
5V, 3.3V, ISRHigh-Performance CPLDs EE PLD, 10 ns, PQFP160
5V, 3.3V, ISRHigh-Performance CPLDs EE PLD, 15 ns, PBGA256
5V, 3.3V, ISRHigh-Performance CPLDs EE PLD, 15 ns, PBGA352
5V, 3.3V, ISRTM High-Performance CPLDs EE PLD, 10 ns, PQFP160
5V, 3.3V, ISRHigh-Performance CPLDs EE PLD, 20 ns, PBGA352
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
|
