| PART |
Description |
Maker |
| LPC3240FET296 |
ARM926EJ-S with 256 kB SRAM, USB High-speed OTG, SD-MMC, NAND flash controller, Ethernet 32-BIT, FLASH, 266 MHz, RISC MICROCONTROLLER, PBGA296
|
NXP Semiconductors N.V.
|
| LPC3220FET296 |
ARM926EJ-S with 128 kB SRAM, USB High-speed OTG, SD-MMC, NAND flash controller
|
NXP Semiconductors N.V.
|
| M48T35-70PC1E M48T35-70PC1F M48T35-70PC6E M48T35-7 |
5V, 256 Kbit (32 Kb x 8) TIMEKEEPER SRAM
256 Kbit (32Kb x 8) ZEROPOWER SRAM(256K位零功耗静态RAM)
|
STMicroelectronics
意法半导
|
| R1RW0416DSB-2PR R1RW0416D R1RW0416DGE-2LR R1RW0416 |
4M High Speed SRAM (256-kword x 16-bit)
Memory>Fast SRAM>Asynchronous SRAM
|
SRAM
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| R1RP0416DSB-2PR R1RP0416D R1RP0416DGE-2LR R1RP0416 |
Memory>Fast SRAM>Asynchronous SRAM
4M High Speed SRAM (256-kword X 16-bit)
From old datasheet system
|
http://
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| R1LV0416C-I R1LV0416CSB-5SI R1LV0416CSB-7LI |
Memory>Low Power SRAM
Wide Temperature Range Version 4M SRAM (256-kword 】 16-bit)
Wide Temperature Range Version 4M SRAM (256-kword × 16-bit)
|
Renesas Electronics Corporation
|
| HM62V16256BLTT-8SL HM62V16256BLTT-8 HM62V16256BLTT |
4 M SRAM (256-kword ×16-bit)(4 M 静态RAM(256k字6) 四米的SRAM56 - KWord的16位）个M静态随机存储器56k字16位）
From old datasheet system
SRAM,256KX16,CMOS,TSOP,44PIN,PLASTIC
|
Hitachi,Ltd.
Hitachi America
|
| AS7C34098A AS7C34098A-20TIN AS7C34098A-10JC AS7C34 |
3.3 V 256 K x 16 CMOS SRAM 256K X 16 STANDARD SRAM, 10 ns, PDSO44
3.3 V 256 K x 16 CMOS SRAM 256K X 16 STANDARD SRAM, 20 ns, PDSO44
Octal Buffers/Drivers With 3-State Outputs 20-TSSOP -40 to 85 256K X 16 STANDARD SRAM, 12 ns, PDSO44
Octal Buffers/Drivers With 3-State Outputs 20-SSOP -40 to 85 256K X 16 STANDARD SRAM, 15 ns, PDSO44
3.3 V 256 K x 16 CMOS SRAM 256K X 16 STANDARD SRAM, 12 ns, PDSO44
3.3 V 256 K x 16 CMOS SRAM 256K X 16 STANDARD SRAM, 15 ns, PDSO44
Octal Buffers/Drivers With 3-State Outputs 20-TSSOP -40 to 85 256K X 16 STANDARD SRAM, 10 ns, PDSO44
Octal Buffers/Drivers With 3-State Outputs 20-SO -40 to 85 256K X 16 STANDARD SRAM, 10 ns, PDSO44
Octal Buffers/Drivers With 3-State Outputs 20-SO -40 to 85 256K X 16 STANDARD SRAM, 20 ns, PDSO44
Octal Buffers/Drivers With 3-State Outputs 20-SOIC -40 to 85 256K X 16 STANDARD SRAM, 20 ns, PDSO44
Replaced by SN74LV244A : Octal Buffer/Driver With 3-State Output 20-SSOP -40 to 85
Replaced by SN74LV244A : Octal Buffer/Driver With 3-State Output 20-SOIC -40 to 85
Octal Buffers/Drivers With 3-State Outputs 20-TVSOP -40 to 85
SRAM - 3.3V Fast Asynchronous
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| LC33832M LC33832ML-10 LC33832ML-70 LC33832ML-80 LC |
256K (32768word x 8bit) Pseudo-SRAM
256 K (32768 words X 8 bits) Pseudo-SRAM 256度（32768字8位）伪SRAM
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co., Ltd.
|
| IBM0418A80QLAB IBM0418A40QLAB |
8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )同步CMOS静态RAM)
4Mb( 256K x 18 ) SRAM(4Mb( 256K x 18 )同步CMOS静态RAM) 4Mb的（256 × 18）的SRAMMb的（256 × 18）同步的CMOS静态RAM）的
|
IBM Microeletronics
International Business Machines, Corp.
|
| IDT728985 IDT728985DB IDT728985J IDT728985J8 IDT72 |
TSI-TDM Switches
256 x 256 Time Slot Interchange Digital Switch, 5.0V
256 x 256 TSI, 8 I/O at 2Mbps, Variable/Constant Delay, 5.0V
|
Integrated Device Technology
IDT
|
