| PART |
Description |
Maker |
| PTFC270101M PTFC270101M-15 |
High Power RF LDMOS Field Effect Transistor
|
Infineon Technologies A...
|
| PTF210101M |
High Power RF LDMOS Field Effect Transistor 10 W, 2110 ?2170 MHz
|
Infineon Technologies AG
|
| PTFA220121M |
High Power RF LDMOS Field Effect Transistor 12 W, 700-2200 MHz
|
Infineon Technologies AG
|
| PTF210901 PTF210901E |
LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz
|
INFINEON[Infineon Technologies AG]
|
| MAPLST1900-030CF |
L BAND, Si, N-CHANNEL, RF POWER, MOSFET
RF Power Field Effect Transistor LDMOS, 1890 - 1925 MHz, 30W, 26V
|
Tyco Electronics
|
| MAPLST0822-002PP |
RF Power Field Effect Transistor LDMOS, 800-2200 MHz, 2W, 28V
|
Tyco Electronics
|
| MAPL-000817-015C00 |
RF Power Field Effect Transistor LDMOS, 800-1700 MHz, 15W, 26V
|
Tyco Electronics
|
| MAPL-000817-015CPC-072706 |
RF Power Field Effect Transistor LDMOS, 800-1700 MHz, 15W, 26V
|
MACOM[Tyco Electronics]
|
| BLF4G20LS-110B |
From old datasheet system
UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
|
Philips Semiconductors
NXP Semiconductors N.V.
|
| BLF6G21-10G |
Power LDMOS transistor
10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
|
NXP Semiconductors N.V.
|
| PXFC192207FH |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
| PXFC191507FC |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
