| PART |
Description |
Maker |
| W9864G2GH-6I W9864G2GH-6C |
512K X 4 BANKS X 32BITS SDRAM 2M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86
|
Winbond Electronics, Corp.
|
| W9812G2IB |
1M x 4 BANKS x 32BITS SDRAM
|
Winbond
|
| W9825G2JB |
2M X 4 BANKS X 32BITS SDRAM
|
Winbond
|
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| W981616BH |
512K 2 BANKS 16 BITS SDRAM
|
Winbond
|
| W981216BH W981216 W981216BH-75 W981216BH-75I W9812 |
2M x 4 Banks x 16 Bit SDRAM
Low Power SDRAM
Industrial SDRAM
2M x 4 BANKS x 16 BIT SDRAM
DRAM - Datasheet Reference
|
Winbond Electronics Corp
WINBOND[Winbond]
|
| IC42S16102-6T IC42S16102-7T IC42S16102-7TI |
512K x 16 Bit x 2 Banks (16-MBIT) SDRAM 12k × 16位2银行6兆）内存
|
Rohm Co., Ltd.
Advanced Interconnections, Corp.
|
| K4S643232C-TL55 K4S643232C-TL70 K4S643232C-TC70 V6 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| W9816G6IH10 W9816G6IH-6I |
512K × 2 BANKS × 16 BITS SDRAM
1M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO50
|
WINBOND ELECTRONICS CORP
|
| W9816G6JH-5 W9816G6JH-6 W9816G6JH-5-TR W9816G6JH-6 |
512K X 2 BANKS X 16 BITS SDRAM
512K X 2 BANKS X 16 BITS SDRAM
|
Winbond
|
| MT47H128M16RT-25EC MT47H128M16RT-25EITC MT47H256M8 |
DDR2 SDRAM MT47H512M4 ?64 Meg x 4 x 8 banks MT47H256M8 ?32 Meg x 8 x 8 banks MT47H128M16 ?16 Meg x 16 x 8 banks
2Gb: x4, x8, x16 DDR2 SDRAM Features
|
Micron Technology
|
