| PART |
Description |
Maker |
| R1LP0108ESP-5SIB0 R1LP0108ESP-5SIS0 R1LP0108ESP-5S |
1Mb Advanced LPSRAM (128k word x 8bit)
|
Renesas Electronics Corporation
|
| R1LV0208BSA-5SI-B0 R1LV0208BSA-5SI-S0 R1LV0208BSA- |
2Mb Advanced LPSRAM (256k word x 8bit)
|
Renesas Electronics Corporation
|
| RMLV0408E RMLV0408EGSA-5S2 RMLV0414EGSB-5S2 RMLV04 |
4Mb Advanced LPSRAM
|
Renesas Electronics Corporation
|
| R1LV1616R0709 R1LV1616RBG-7S R1LV1616RBG-8S R1LV16 |
16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit)
|
Renesas Electronics Corporation
|
| RMLV0408E-15 |
4Mb Advanced LPSRAM (512-kword × 8-bit)
|
Renesas Electronics Corporation
|
| GS88118 GS88136 GS88118GT-11IT GS88118GT-11.5IT GS |
512K x 18, 256K x 36 ByteSafe?/a> 8Mb Sync Burst SRAMs
512K x 18, 256K x 36 ByteSafe 8Mb Sync Burst SRAMs
512K x 18, 256K x 36 ByteSafe8Mb Sync Burst SRAMs
8Mb锛?12K x 18Bit) ByteSafe Synchronous Burst SRAM(8M浣??512K x 18浣??ByteSafe??????RAM锛?甫2浣???插?????板?锛?
512K X 18 CACHE SRAM, 11.5 ns, PQFP100 TQFP-100
512K X 18 CACHE SRAM, 11 ns, PQFP100 TQFP-100
8Mb56K x 36Bit)ByteSafe Synchronous Burst SRAM(8M位（256K x 36位）ByteSafe同步静态RAM（带2位脉冲地址计数器）)
8Mb12K x 18Bit) ByteSafe Synchronous Burst SRAM(8M位（512K x 18位）ByteSafe同步静态RAM（带2位脉冲地址计数器）)
|
GSI Technology, Inc.
|
| R1LV1616R_07 R1LV1616R R1LV1616RBG-5SI R1LV1616RBG |
16Mb Advanced LPSRAM (1M wordx16bit / 2M wordx8bit) 16Mb的先进LPSRAM00万wordx16bit / 200wordx8bit
|
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
Renesas Electronics, Corp.
|
| WCMC8016V9X-FI70 WCMC8016V9X |
8Mb (512K x 16) Pseudo Static RAM
|
WEIDA[Weida Semiconductor, Inc.]
|
| MT58L512L18F |
8Mb: 512K x 18, 256K x 32/36 FLOW-THROUGH SYNCBURST SRAM
|
Micron Technology, Inc.
|
| MT58L256L36D |
8Mb: 512K x 18, 256K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM
|
Micron Technology
|
| TC554001AFI-70 TC554001AFTI-85 |
512K word x 8 Static RAM(512K x 8 静RAM)
|
Toshiba Corporation
|
