| PART |
Description |
Maker |
| W9812G2IB |
1M x 4 BANKS x 32BITS SDRAM
|
Winbond
|
| W9812G2GB |
1M x 4 BANKS x 32BITS SDRAM
|
Winbond
|
| W9864G2IB |
512K × 4 BANKS × 32BITS SDRAM
|
Winbond
|
| W9864G2GH-6I W9864G2GH-6C |
512K X 4 BANKS X 32BITS SDRAM 2M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86
|
Winbond Electronics, Corp.
|
| W981216BH W981216 W981216BH-75 W981216BH-75I W9812 |
2M x 4 Banks x 16 Bit SDRAM
Low Power SDRAM
Industrial SDRAM
2M x 4 BANKS x 16 BIT SDRAM
DRAM - Datasheet Reference
|
Winbond Electronics Corp
WINBOND[Winbond]
|
| MT48LC4M32B2P-6G MT48LC4M32B2F51 MT48LC4M32B2B5-6G |
SDR SDRAM
128Mb: x32 SDRAM MT48LC4M32B2 ?1 Meg x 32 x 4 Banks
|
Micron Technology
|
| K4S560832A K4S560832A-TC_L1H K4S560832A-TC_L1L K4S |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
IC,SDRAM,4X8MX8,CMOS,TSOP,54PIN,PLASTIC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IC42SXXXXX IC42S16800L |
DYNAMIC RAM, SDRAM
4M x 8M x 4 Banks SDRAM
|
ICSI
Integrated Circuit Solution Inc
|
| 50S116T |
SDRAM(512K X 2 BANKS X 16 BITS SDRAM)
|
CERAMATE[Ceramate Technical]
|
| W942516CH W942516CH-75 W942516CH-5 W942516CH-6 |
DDR SDRAM (Double Data Rate)
4M X 4 BANKS X 16 BIT DDR SDRAM
From old datasheet system
|
Winbond Electronics
|
| 50S116T 50S116T-5 50S116T-6 50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA
SDRAM(512K X 2 BANKS X 16 BITS SDRAM)
|
CERAMATE TECHNOLOGY CO., LTD.
|
