PART |
Description |
Maker |
TC58FVM7T2AFT65 TC58FVM7B2 TC58FVM7B2AFT TC58FVM7B |
128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY
|
TOSHIBA[Toshiba Semiconductor]
|
TC58FVB321XB-70 TC58FVXB-70 TC58FVT321XB-70 TC58FV |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M X 8 BITS / 2M X 16 BITS) CMOS FLASH MEMORY 东芝马鞍山数字集成电路硅栅CMOS 32兆位米8 2米16位)的CMOS闪存 32-MBIT (4M 8 BITS / 2M 16 BITS) CMOS FLASH MEMORY 32-MBIT (4Mx8 BITS/2Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba, Corp. Toshiba Corporation
|
TC58FVT160AXB-70 TC58FVB160AXB-70 TC58FVB160AFT-70 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT (2M 8 BITS / 1M 16 BITS) CMOS FLASH MEMORY 16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba Corporation
|
IC42S81600-8TG IC42S81600L-8TG IC42S16800L-8TG IC4 |
4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM 4M中的x 86)位× 4银行28 - Mbit的)同步动态RAM 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM 4)M中的x 86)位× 4银行128 - Mbit的)同步动态RAM 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM 4)M中的x 86)位× 4银行28 - Mbit的)同步动态RAM 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM 4M中的x 816)位× 4银行28 - Mbit的)同步动态RAM IC DUAL SPDT ANALOG SW 16-SOIC Single/Dual Supply, Quad SPDT Switch Single/Dual Supply, Quad SPST Switch ER 14C 14#16 SKT PLUG RES 10K-OHM 5% 0.1W 200PPM THICK-FILM SMD-0603 5K/REEL-7IN-PA RES 100K-OHM 5% 0.1W 200PPM THICK-FILM SMD-0603 5K/REEL-7IN-PA RES 100K-OHM 1% 0.1W 100PPM THICK-FILM SMD-0603 5K/REEL-7IN-PA
|
Electronic Theatre Controls, Inc. Toshiba, Corp. Microchip Technology, Inc. Integrated Circuit Solution Inc Integrated Circuit Solu...
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TC58FVT641 TC58FVT641XB-10 TC58FVT641XB-70 TC58FVB |
64-MBIT (8M 8 BITS / 4M 16 BITS) CMOS FLASH MEMORY 64-MBIT (8M × 8 BITS / 4M × 16 BITS) CMOS FLASH MEMORY
|
Toshiba Corporation Toshiba Semiconductor
|
IS42S32160A IS42S32160A-75B IS42S32160A-75BI IS42S |
4M Words x 32 Bits x 4 Banks (512-MBIT) SYNCHRONOUS DYNAMIC RAM 16M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
|
Integrated Silicon Solution, Inc 天津新技术产业园区管理委员会 INTEGRATED SILICON SOLUTION INC
|
EDD2516AKTA-5-E EDD2516AKTA-5C-E |
256M bits DDR SDRAM (16M words x16 bits, DDR400)
|
Elpida Memory, Inc. ELPIDA MEMORY INC
|
EDL5132CBMA-10-E EDL5132CBMA |
512M bits Mobile RAM MCP 2 pcs of 256Mb components (16M words x 32 bits)
|
ELPIDA[Elpida Memory]
|
EDL5132CBMA-10-E |
512M bits Mobile RAM MCP 2 pcs of 256Mb components (16M words x 32 bits)
|
Elpida Memory, Inc.
|
TC58V64BFT |
64-MBIT (8M x 8 BITS) CMOS NAND E2PROM 64-MBIT (8M 8 BITS) CMOS NAND E2PROM
|
TOSHIBA
|
TC5816BDC |
16 MBIT (2M x 8 BITS) CMOS NAND FLASH E2PROM
|
TOSHIBA[Toshiba Semiconductor]
|
S29GL256S |
1-Gbit (128 Mbyte)/512-Mbit (64 Mbyte)/256-Mbit (32 Mbyte)/128-Mbit (16 Mbyte),3.0 V, GL-S Flash Memory
|
Cypress Semiconductor
|