| PART |
Description |
Maker |
| TLP1254C6 |
PHOTOINTERRUPTER INFRARED LED PHOTO IC
|
TOSHIBA
|
| TLP1006A TLP1007A |
(TLP1006A / TLP1007A) PHOTOINTERRUPTER INFRARED LED PHOTO IC
|
Toshiba
|
| TLP1015 TLP1014 E006221 P1015 P1014 |
3 mm SLOT WIDTH, 1 CHANNEL SLOTTED OPTICAL SWITCH LOGIC OUTPUT
From old datasheet system
TOSHIBA PHOTOINTERRUPTER INFRARED LED PHOTO IC 东芝光电断路器红外LED相机芯片
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.
|
| TLN107A E006145 |
INFRARED LED GaAS INFRARED EMITTER
From old datasheet system
INFRARED LED FOR PHOTO INTERRUTER
|
TOSHIBA[Toshiba Semiconductor]
|
| NTE30001 |
2.5 mm, 1 ELEMENT, INFRARED LED, 950 nm
Infrared Emitting Diode Bi.Directional
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| 1N6266 |
GAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| WP34SF7C |
T-1 (3mm) INFRARED EMITTING DIODE 3 mm, 1 ELEMENT, INFRARED LED, 850 nm
|
Kingbright, Corp.
KINGBRIGHT[Kingbright Corporation]
|
| F5D3 F5D1 F5D2 |
AIGAAS INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 880 nm
|
QT[QT Optoelectronics]
|
| OP165D |
GaAs Plastic Infrared Emitting Diode(砷化镓塑料红外发光二极管,可替代K6500\OP163系列器件) 3 mm, 1 ELEMENT, INFRARED LED, 935 nm
|
Optek Technology
|
| ASDL-4770-C22 ASDL-4770-C41 |
1 ELEMENT, INFRARED LED, 940 nm
High Performance Side look AlGaAs/GaAs Infrared (940nm) Lamp
|
AVAGO TECHNOLOGIES LIMITED
http://
|
