PART |
Description |
Maker |
2N2326 |
SCR, V(DRM) = 200 V TO 299.9 V
|
New Jersey Semi-Conductor Products, Inc.
|
STK16C88-S35 STK16C88-S45I STK16C88-S35I STK16C88- |
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35uA NVRAM (EEPROM Based) SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):35A; Peak Non Repetitive Surge Current, Itsm:500A; Gate Trigger Current Max, Igt:40uA DIODE TVS 13V 500W AXL UNI 5% NVRAM中(EEPROM的基础 SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50uA
|
Electronic Theatre Controls, Inc.
|
BD825-16 BD827-10 BD827-6 BD829-6 |
SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):12A; Peak Non Repetitive Surge Current, Itsm:120A; Gate Trigger Current Max, Igt:20mA SCR Thyristor; SCR Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):65A; Peak Non Repetitive Surge Current, Itsm:950A; Gate Trigger Current Max, Igt:50uA TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1.5A I(C) | TO-202 晶体管|晶体管|叩| 45V的五(巴西)总裁| 1.5AI(丙)|02 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | TO-202 晶体管|晶体管|叩| 60V的五(巴西)总裁|甲一(c)|202
|
Analog Devices, Inc. HIROSE ELECTRIC Co., Ltd.
|
STIP4006 STI2006 STIP3006 STI2506 STIP2506 STIP150 |
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA Transient Surge Protection Thyristor; Package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:320V; Capacitance:60pF; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole; On-State Saturation Voltage:4V Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-202; Current, It av:6A; Holding Current:50mA TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 1A I(C) | TO-66 Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:10mA; Package/Case:V-PAK; Current, It av:4A; Holding Current:20mA TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 1A I(C) | TO-66
|
|
B25H2S60KL B25H2S20KL B25H2S40KL B25H2S10KL B25H2S |
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|600V V(RRM)|25A I(T) THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|200V V(RRM)|25A I(T) THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|400V V(RRM)|25A I(T) THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|100V V(RRM)|25A I(T) THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|1.2KV V(RRM)|25A I(T) THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|1KV V(RRM)|25A I(T) 晶闸管模块|可控硅|双|独立| 1KV交五(无线资源管理)|5A我(翻译
|
SCHURTER AG
|
WG14013FR04 WG12013FR02 WG18015R FR35 WG18027R12 W |
1340 A, 1300 V, GATE TURN-OFF SCR 2150 A, 1500 V, SYMMETRICAL GTO SCR 820 A, 4000 V, GATE TURN-OFF SCR 1685 A, 2700 V, GATE TURN-OFF SCR 870 A, 600 V, GATE TURN-OFF SCR 700 A, 600 V, GATE TURN-OFF SCR 730 A, 1000 V, GATE TURN-OFF SCR 890 A, 1000 V, GATE TURN-OFF SCR
|
WESTCODE SEMICONDUCTORS LTD
|
HD-15531883 HD-15531/883 |
SCR Thyristor; SCR Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:30V; On-State RMS Current, IT(rms):4A; Peak Non Repetitive Surge Current, Itsm:20A; Gate Trigger Current Max, Igt:50uA Multiconductor Cable; Number of Conductors:6; Conductor Size AWG:18; No. Strands x Strand Size:Solid; Jacket Material:FRPE - Flame Retardant Polyethylene; Leaded Process Compatible:Yes; Capacitance:17uF; Conductor Material:Copper RoHS Compliant: Yes
|
Intersil Corporation
|
CS16-06GO2 CS5-06GO2 CS5-02GO2 CS112-12IO8 CS52-14 |
30 A, 600 V, SCR, TO-208AA 18.055 A, 600 V, SCR, TO-64 18.055 A, 200 V, SCR, TO-64 220 A, 1200 V, SCR, TO-209AC 120 A, 1400 V, SCR, TO-209AC
|
IXYS CORP
|
BT151-600 BT151 |
600V Vdrm 12A Sensitive Gate Silicon Controlled Rectifier, 1.7@23AV Peak On-State Voltage, 200V/μs Rise of Off-State Voltage Silicon Controlled Rectifiers
|
SemiWell Semiconductor
|
R216CH12 R325CH02 R800CH04 |
1125 A, 1200 V, SCR 2398 A, 200 V, SCR 5260 A, 400 V, SCR
|
Westcode Semiconductors, Ltd. WESTCODE SEMICONDUCTORS LTD
|
C232F C228F-255 C228F-256 C228F-252 C231U-242 C231 |
35 A, 50 V, SCR, TO-3 25 A, 25 V, SCR 25 A, 50 V, SCR, TO-3 35 A, 800 V, SCR, TO-48 35 A, 1200 V, SCR, TO-48
|
Semitronics, Corp. SEMITRONICS CORP
|
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