| PART |
Description |
Maker |
| BAT54A-AE3-R BAT54C-AE3-R BAT54C-AL3-R BAT54S-AE3- |
SCHOTTKY BARRIER (DUAL) DIODES 肖特基（双）二极
SCHOTTKY BARRIER (DUAL) DIODES 0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
Comchip Technology
|
| MA3S781E MA3S781D |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD)
|
Matsshita / Panasonic
|
| MA2YD21 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD)
|
Matsshita / Panasonic
|
| WSD705 WSD706 |
Surface Mount Schottky Barrier Diodes
SMALL SIGNAL SCHOTTKY DIODES 30m AMPERES 40 VOLTS
|
Weitron Technology
ETC
|
| CDBQR00340-HF12 CDBQR00340-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=45V, V-R=40V, I-O=0.03A
SMD Schottky Barrier Diode
|
Comchip Technology
|
| CDBURT0230R-HF CDBUR0230R-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=35V, V-R=30V, I-O=0.2A
Low Profile SMD Schottky Barrier Diode
|
Comchip Technology
|
| BAT15-014 BAT15-044 BAT15-074 BAT15-104 BAT15-124 |
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) SILICON, LOW BARRIER SCHOTTKY, X BAND, MIXER DIODE
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz) 硅肖特基二极管（低搅拌机应用障碍密封二极管频率高0 GHz的陶瓷封装）
RES, 18 OHM 1% 1/8W SILICON, LOW BARRIER SCHOTTKY, C BAND, MIXER DIODE
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| CDBW0530-G CDBW0520L-G12 CDBW0540-G CDBW0520L-G |
Schottky Barrier Rectifiers Diodes, V-RRM=40V, V-R=40V, I-O=0.5A
Schottky Barrier Rectifiers Diodes, V-RRM=30V, V-R=30V, I-O=0.5A
Schottky Barrier Rectifiers Diodes, V-RRM=20V, V-R=20V, I-O=0.5A
SMD Schottky Barrier Diodes
SMD Schottky Barrier Diodes
|
Comchip Technology
|
| HSB226WK |
Schottky Barrier Diodes for Detection and Mixer
SILICON SCHOTTKY BARRIER DIODE
|
HITACHI[Hitachi Semiconductor]
|
| BAT54CW BAT54SW BAT54AW BAT54W BAT54CWT/R BAT54WSE |
Schottky barrier (double) diodes - Cd max.: 10@VR=1V pF; Configuration: dual c.c. ; IF max: 200 mA; IFSM max: 600 A; IR max: 2@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V
Schottky barrier double diodes
|
NXP Semiconductors / Philips Semiconductors
PHILIPS[Philips Semiconductors]
|
| BAT54A BAT54TA BAT54S BAT54SRS-15 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODES 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE
SOT23 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES
|
Diotec Semiconductor AG
Diodes Incorporated
|
