PART |
Description |
Maker |
BGT24AT2 |
Silicon Germanium 24 GHz Transmitter MMIC
|
Infineon Technologies A...
|
1N476 1N499 1N500 1N279 1N292 1N294 1N567 1N450 1N |
165 V, 500 mA, gold bonded germanium diode 100 V, 500 mA, gold bonded germanium diode 12 V, 500 mA, gold bonded germanium diode 90 V, 500 mA, gold bonded germanium diode GOLD BONDED DIODES(LOW FORWARD VOLTAGE, LOW POWER CONSUMPTION) 75 V, 500 mA, gold bonded germanium diode 120 V, 500 mA, gold bonded germanium diode 70 V, 500 mA, gold bonded germanium diode 80 V, 500 mA, gold bonded germanium diode 115 V, 500 mA, gold bonded germanium diode 60 V, 500 mA, gold bonded germanium diode
|
BKC International Electronics ETC[ETC]
|
PSP-500 PSP-500-5 PSP-500-15 PSP-500-24 PSP-500-48 |
TRANSDUCER,MAG,1.5Vpp @ 10mA 2048HZ @ 80db,50ohm,2 PINS TRANS,WALL,6VDC/500mA,M2 3.5mm,UL/CSA 100/cs TRANS,WALL,5VDC/225mA,F2, 2.5mm x 5.5mm,UL/CSA 40/cs PFC和并行与500W的功 TRANS,WALL,REG,6VDC/200MA, 2.1mmX5.5mm,F2,UL/CUL PFC和并行与500W的功 TRANS,WALL,6VDC/500mA,F1, 2.1mm X 5.5mm,UL,CULC-NEG PFC和并行与500W的功 TRANS,WALL,6VDC/500mA,F2 2.1mm x 5.5mm,UL/CSA 50/cs PFC和并行与500W的功 CONN,DSUB,.590"RT,25P-M, LONG,METAL HOUSING W/PC TABS PFC和并行与500W的功
|
Astrodyne, Inc.
|
1N128 |
Germanium Diodes / Germanium Rectifiers
|
ETC
|
BFU730F |
wideband silicon germanium RF transistor
|
NXP Semiconductors
|
NESG3032M14-T3-A NESG3032M14-A |
NPN SILICON GERMANIUM RF TRANSISTOR
|
California Eastern Laboratories
|
SGA-9189 |
Silicon Germanium HBT Amplifier
|
Electronic Theatre Controls, Inc. ETC List of Unclassifed Manufacturers
|
BFP74009 |
NPN Silicon Germanium RF Transistor
|
Infineon Technologies AG Infineon Technologies A...
|
BFU760F |
wideband silicon germanium RF transistor
|
NXP Semiconductors
|
NESG260234-T1 NESG260234 NESG260234-T1-AZ |
NPN SILICON GERMANIUM RF TRANSISTOR
|
Duracell CEL[California Eastern Labs]
|
NESG340034 NESG340034-T1 |
NPN Silicon Germanium RF Transistor
|
Renesas Electronics Corporation
|
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