PART |
Description |
Maker |
NX6342EP |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
|
Renesas Electronics Corporation
|
NX8349XK NX8349YK NX8349TS |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
NX8341_06 NX8341 NX8341TB-AZ NX8341TJ-AZ NX8341TL- |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
CEL[California Eastern Labs]
|
NX5320EH-AZ |
1 310 nm AlGaInAs MQW-FP LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION
|
California Eastern Labs
|
NX6311EH-AZ |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION 1 310纳米AlGaInAs多量子阱激光器的激光二极管 Gb / s光纤通道应用
|
California Eastern Laboratories, Inc.
|
NX6353EP27-AZ |
1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE FOR 9.8Gbps CPRI, 10G Ethernet APPLICATION
|
California Eastern Labs
|
NX8346TB |
LASER DIODE 1310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
NDL7603PC NDL7603P NDL7603P1C NDL7603P1D NDL7603P2 |
1 310 nm OPTICAL FIBER COMMUNICATIONS InGaAsP MQW-DFB LASER DIODE COAXIAL MODULE 1 310纳米光纤通信InGaAsP多量子阱激光器激光二极管同轴模块 Opical Fiber Communications Laser Diode(光纤通信激光二极管) Low Power 5V RS232 Dual Driver/Receiver with 0.1?μF Capacitors; Package: SO; No of Pins: 16; Temperature Range: -40?°C to 85?°C
|
NEC, Corp. NEC Corp. NEC[NEC]
|
NX6314EH |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS
|
California Eastern Labs
|
NX6308GH NX6308GH-15 |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
NX7337BJ-AA-15 |
1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE WITH MMF FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|