| PART |
Description |
Maker |
| SEMIX151GB12T4S |
Trench IGBT Modules 230 A, 1200 V, N-CHANNEL IGBT
|
SEMIKRON
|
| FSL130D FSL130D1 FSL130D3 FSL130R FSL130R1 FSL130R |
From old datasheet system
8A/ 100V/ 0.230 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
8A, 100V, 0.230 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 8A条，100V的，0.230欧姆，拉德硬，SEGR耐，N沟道功率MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| ISL9N303AS3ST ISL9N303AS3 ISL9N303AP3 N303AS N303A |
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
RECTIFIER SCHOTTKY DUAL COMMON-CATHODE 30A 40V 250A-Ifsm 0.55Vf 1A-IR D2PAK 800/REEL-13 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-Channel Logic Level UltraFET Trench MOSFETs 30V / 75A / 3.2m
N-Channel Logic Level UltraFET Trench MOSFETs 30V 75A 3.2m
N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2m?/a>
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| HMC816LP4E |
SMT GaAs PHEMT DUAL CHANNEL LOW NOISE AMPLIFIER, 230 - 660 MHz
|
Hittite Microwave Corporation
|
| STI16N65M5 STU16N65M5 STP16N65M5 STF16N65M5 |
N-channel 650 V, 0.230 Ω, 12 A MDmesh V Power MOSFET in TO-220FP, I2PAK, TO-220, IPAK, TO-247
N-channel 650 V, 0.230 Ω, 12 A MDmesh?/a> V Power MOSFET in TO-220FP, I2PAK, TO-220, IPAK, TO-247
N-channel 650 V, 0.230 Ω, 12 A MDmesh?V Power MOSFET in TO-220FP, I2PAK, TO-220, IPAK, TO-247
|
STMicroelectronics
|
| FDMC8296 FDMC829610 |
30V N-Channel Power Trench MOSFET; Package: Power 33 (PQFN); No of Pins: 8; Container: Tape & Reel 12 A, 30 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Power Trench? MOSFET 30V, 18A, 8.0m
|
Fairchild Semiconductor, Corp.
|
| PMV16UN |
20 V, 5.8 A N-channel Trench MOSFET Trench MOSFET technology Relay driver
|
TY Semiconductor Co., Ltd
|
| APT25GN120B APT25GN120BG APT25GN120S APT25GN120SG |
Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; Package: D3 [S]; BV(CES) (V): 1200; VCE(sat) (V): 1.7; IC (A): 33; 67 A, 1200 V, N-CHANNEL IGBT
Utilizing the latest Field Stop and Trench Gate technologies
|
Microsemi, Corp.
Microsemi Corporation
|
| XC3190-4PQ160I XC3190-4PQ208I XC3142-3TQ144C XC314 |
FPGA, 320 CLBS, 5000 GATES, 230 MHz, PQFP160
FPGA, 320 CLBS, 5000 GATES, 230 MHz, PQFP208
FPGA, 144 CLBS, 3000 GATES, 270 MHz, PQFP144
FPGA, 144 CLBS, 3000 GATES, 230 MHz, PQFP100
|
XILINX INC
|
| FDA2712 |
N-Channel UltraFET Trench MOSFET 250V, 64A, 34mOhms
N-Channel UltraFET Trench MOSFET 250V, 64A, 34mΩ
|
Fairchild Semiconductor
|
| FDI3632 FDP3632 FDB3632 |
N-Channel UltraFET ?Trench MOSFET 100V, 80A, 9mOhm
N-Channel UltraFET Trench MOSFET 100V, 80A, 9m Ohm
|
Fairchild Semiconductor
|
| PM15CHA060 |
Intellimod3 Module Three Phase IGBT Inverter Output (15 Amperes/110-230 Volts) Intellimod3模块三相IGBT逆变输出5 Amperes/110-230伏特
Module Three Phase Brake IGBT Inverter Output
Intellimod⑩-3 Module Three Phase IGBT Inverter Output (15 Amperes/110-230 Volts)
Intellimod-3 Module Three Phase IGBT Inverter Output (15 Amperes/110-230 Volts)
Intellimod?3 Module Three Phase IGBT Inverter Output (15 Amperes/110-230 Volts)
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
|
