| PART |
Description |
Maker |
| RJP4009ANS RJP4009ANS-15 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| RJP4003ANS-00-Q1 RJP4003ANS |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| CY25BAJ-8F-T13 |
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| RJP4002ANS RJP4002ANS-00-Q1 |
400 V, N-CHANNEL IGBT 3 X 4.40, 0.65 MM HEIGHT, ULTRA SMALL, PLASTIC, VSON-8
Nch IGBT for Strobe Flash
|
Renesas Electronics Corporation
|
| SGU20N40L |
Wide Noise Immunity IGBT Suitable for Strobe Flash applications(应用于闸门闪光的抗噪声绝缘栅双极晶体IGBT)) 400 V, N-CHANNEL IGBT, TO-251
|
Fairchild Semiconductor, Corp.
|
| FGR15N40A |
Strobe Flash N-Channel Logic Level IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| GT8G136 |
Silicon N Channel IGBT Strobe Flash Applications
|
Toshiba Semiconductor
|
| GT25G101SM E001917 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| GT20G101SM E001913 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
From old datasheet system
|
TOSHIBA[Toshiba Semiconductor]
|
| GT20G101SM |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
| GT25G102SM |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
| GT20G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
