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STN1810 - STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

STN1810_4643593.PDF Datasheet

 
Part No. STN1810
Description STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

File Size 958.14K  /  7 Page  

Maker


Stanson Technology



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Part: STN1NB80
Maker: ST
Pack: SOT-22..
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 Full text search : STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
 Product Description search : STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.


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