| PART |
Description |
Maker |
| ZXMHC10A07N8 ZXMHC10A07N8TC |
100V SO8 Complementary enhancement mode MOSFET H-Bridge
|
Diodes Incorporated
|
| WFS5HB03N8 |
30V SO8 Complementary enhancementmode MOSFET H-Bridge
|
Shenzhen Winsemi Microelectronics Co., Ltd
|
| ZXMHC6A07N8 ZXMHC6A07N8TC |
60V SO8 Complementary enhancement mode MOSFET H-Bridge
|
Diodes Incorporated
|
| CFB1063 CFB1063P CFD1499Q |
2.000W Power PNP Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 60 - 200 hFE. Complementary CFD1499
2.000W Power PNP Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 100 - 200 hFE. Complementary CFD1499P
2.000W Power NPN Plastic Leaded Transistor. 100V Vceo, 5.000A Ic, 60 - 120 hFE. Complementary CFB1063Q
|
Continental Device India Limited
|
| MJF122-D MJF127 |
Complementary Power Darlingtons For Isolated Package Applications
Power 5A 100V Darlington NPN
Power 5A 100V PNP
|
ON Semiconductor
|
| ZXMN3G32DN8TA ZXMN3G32DN8 |
30V SO8 dual N-channel enhancement mode MOSFET
|
Diodes Incorporated
Zetex Semiconductors
|
| BSO604NS2 |
Low Voltage MOSFETs - Dual-SO8; 5 A; 55V; LL; 35 mOhm
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| NTMD6601NR2G NTMD6601N |
80V 2.2A DUAL N-CHANNEL SO8
NFET S08D 80V
Power MOSFET 80 V, 2.2 A, Dual N-Channel, SO-8
|
ON Semiconductor
|
| MJD112-001 MJD112RL MJD112T4 MJD112T4G MJD117 MJD1 |
Power 2A 100V Darlington NPN
Power 2A 100V Darlington PNP
Complementary Darlington Power Transistors
|
ONSEMI[ON Semiconductor]
|
| MPQ6001N MPQ6002 MPQ6502N MPQ6001 MPQ6002N MPQ6501 |
QUAD DUAL IN LINE SILICON COMPLEMENTARY PAIR TRANSISTORS 四双行中的硅互补对三极管
(MPQ6001 / MPQ6002 / MPQ6501 / MPQ6502) QUAD DUAL IN LINE SILICON COMPLEMENTARY PAIR TRANSISTORS
|
MOTOROLA[Motorola, Inc]
|
| BYW51-100 BYW51-150 BYW51-200 FN1374.PDF FN1412 |
25C 16 190/38 BC PVC,PVC
8A/ 100V - 200V Ultrafast Dual Diodes
8A, 100V - 200V Ultrafast Dual Diodes
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| IRF7350 IRF7350N IRF7350P IRF7350TR |
-100V Single DUAL-Channel HEXFET Power MOSFET in a SO-8 package
100V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss= -100V)
|
IRF[International Rectifier]
|
