| PART |
Description |
Maker |
| MSN0612W |
60V(D-S) N-Channel Enhancement Mode Power MOS FET
|
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| MSN0675K-TO220-3L |
60V(D-S) N-Channel Enhancement Mode Power MOS FET
|
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|
| MSN0650Z MSN0650Z-TO251 |
60V(D-S) N-Channel Enhancement Mode Power MOS FET
|
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|
| MSN06B2K MSN06B2K-TO220 |
60V(D-S) N-Channel Enhancement Mode Power MOS FET
|
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|
| MSN06B0K MSN06B0K-TO220 |
60V(D-S) N-Channel Enhancement Mode Power MOS FET
|
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|
| RJK0651DPB RJK0651DPB-00-J5 RJK0651DPB-13 |
60V, 25A, 14m max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK0654DPB-00-J5 RJK0654DPB-15 |
60V, 30A, 8.3m nax. Silicon N Channel Power MOS FET Power Switching
60V, 30A, 8.3m?nax. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| MSC0605W |
60V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
|
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|
| FDD5353 |
60V N-Channel Power Trench MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 11.5 A, 60 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-Channel Power Trench㈢ MOSFET 60V, 50A, 12.3mヘ
N-Channel Power Trench? MOSFET 60V, 50A, 12.3mΩ
|
Fairchild Semiconductor, Corp.
|
| 2SK1297 |
V(dss): 60V; I(d): 40A; 100W; silicon N-channel MOS FET. For high speed power switching
|
Hitachi Semiconductor
|
| UPA1724 UPA1724G PA1724 UPA1724G-E1 UPA1724G-E2 |
N-channel enhancement type power MOS FET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
10 A, 20 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| STD12NE06L STD12NE06L-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 12A I(D) | TO-251AA 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 12A条（丁）|51AA
N - CHANNEL 60V - 0.09ohm- 12A TO-251/TO-252 STripFET POWER MOSFET
N-CHANNEL POWER MOSFET
|
California Eastern Laboratories, Inc.
STMicroelectronics
ST Microelectronics
|
