| PART |
Description |
Maker |
| APA3010F3C |
3.0x1.0 mm RIGHT ANGLE INFRARED EMITING DIODE 2 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Kingbright, Corp.
Kingbright Corporation
|
| LED55BF LED55CF LED56F |
GAAS INFRARED EMITTIN DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| OP168F OP268FB OP268FPS OP268FA OP268FC OP269A OP2 |
Plastic Infrared Emitting Diode 0.76 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
TT electronics OPTEK Technology
OPTEK TECHNOLOGY INC
|
| Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器，红外Lumineszenzdiode GaAlA红外发射
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| IR333-H0-L10 IR333/H0/L10 |
5 mm, 1 ELEMENT, INFRARED LED, 940 nm
5mm Infrared LED , T-1 3/4
|
EVERLIGHT ELECTRONICS CO LTD
Everlight Electronics Co., Ltd
|
| HSDL-4200 HSDL-42001 HSDL-4220 |
High-Performance T-13/4 (5mm) TS alGaAs Infrared (875nm) Lamp 5 mm, 1 ELEMENT, INFRARED LED, 875 nm
High-Performance T-13/4 (5 mm) TS AlGaAs Infrared (875 nm) Lamp
|
Lite-On Technology, Corp.
Agilent(Hewlett-Packard)
|
| IR95-21C/TR7 |
1.9 mm, 1 ELEMENT, INFRARED LED, 875 nm
|
EVERLIGHT ELECTRONICS CO LTD
|
| QEB363.YR |
1.9 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT OPTOELECTRONICS
|
| SFH462 |
4.19 mm, 1 ELEMENT, INFRARED LED, 660 nm
|
Infineon Technologies AG
|
| GL480Q |
1.6 mm, 1 ELEMENT, INFRARED LED, 950 nm
|
SHARP ELECTRONICS CORP
|
| QED221.A4A0 |
5 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
QT OPTOELECTRONICS
|
| OED-EL2350W |
19.05 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Lumex, Inc.
|
