PART |
Description |
Maker |
NTGD4169F NTGD4169FT1G |
30V 2.9A N-Ch with Schottky Barrier Diode TSOP6 Power MOSFET and Schottky Diode 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
|
ON Semiconductor
|
KDR367E |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
KDR368E |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
KDR331E |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
KDR378 |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
5082-2350 50822350 |
MEDIUM BARRIER SCHOTTKY DIODE SILICON, MEDIUM BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE From old datasheet system
|
Advanced Semiconductor, Inc.
|
SB01-15NP SB01-15NP-E |
150V, 100mA Rectifier Shottky Barrier Diode Schottky Barrier Diode DIODE SCHOTTKY 150V 0.1A 3NP
|
Sanyo Semiconductor SANYO[Sanyo Semicon Device]
|
KDR322 |
SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING) Schottky Barrier Diode
|
KEC[KEC(Korea Electronics)] Korea Electronics (KEC)
|
KDR331V |
SCHOTTKY BARRIER TYPE DIODE SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING) Schottky Barrier Diode
|
KEC(Korea Electronics) Korea Electronics (KEC)
|
HSB88WA |
Schottky Barrier Diodes for Detection and Mixer SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING
|
HITACHI[Hitachi Semiconductor]
|
HSB88WK |
Schottky Barrier Diodes for Detection and Mixer SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING
|
HITACHI[Hitachi Semiconductor]
|