| PART |
Description |
Maker |
| RH101 RH103 RH105 |
Voltage 100V ~ 800V 0.8 Amp Silicon Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
|
| SPI08N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
|
Infineon
|
| S2GBP40-C S2GBP80-C |
Voltage 200V ~800V 2.0 Amp Glass Passivited Bridge Rectifres
|
SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnologie...
|
| SCDS106 |
VOLTAGE 800V 1.0 AMP Glass Passivated Super Fast Recovery Rectifier
|
SeCoS Halbleitertechnologie GmbH
|
| 2SA1417 2SC3647 2SC3647T 2SA1417S |
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | SOT-89
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 100V的五（巴西）总裁|甲一（c）|采用SOT - 89
High-Voltage Switching Applications
|
Unisonic Technologies Co., Ltd.
SANYO[Sanyo Semicon Device]
|
| SBL40H100RF |
VOLTAGE 100V 40.0 Amp Low VF Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| UPDS5100H |
5 Amp 100V High Voltage Schottky Barrier Rectifier
|
Microsemi
|
| 2SC3151 2SC3151M 2SC3151L |
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 800V的五（巴西）总裁| 1.5AI（丙）|18VAR
TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 1.5A I(C) | TO-218VAR
For Switching Regulators
|
Honeywell International, Inc.
SANYO[Sanyo Semicon Device]
|
| SBL30U100 |
Voltage 100v 30.0 Amp Low VF Trench MOS Barrier Schottky Recifier
|
SeCoS Halbleitertechnologie GmbH
|
| SMP3100 SMP340 SMP360 |
Voltage 40V ~ 100V 3.0 Amp Surface Mount Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| SPW11N80C3 INFINEONTECHNOLOGIESAG-SPW11N80C3 |
Cool MOS Power Transistor
Cool MOS™ Power Transistor
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
|
INFINEON[Infineon Technologies AG]
|
