| PART |
Description |
Maker |
| AS3834 AS3834-ZSOT AS3834-ZTQT |
4 channel high-precision LED cont rol ler for 3D-LCD backl ight wi th
|
ams AG
|
| IRFY430M-T257 |
Publications, Books RoHS Compliant: NA
N-Channel Power MOSFET For HI-REL Application(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω)(N沟道功率MOS场效应管,HI-REL应用(Vdss:500V,Id(cont):4.5A,Rds(on):1.65Ω))
N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS
|
TT electronics Semelab Limited
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| IRF9130SMD |
P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω))
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| EDR-21-060 |
Spacefl ight and Military Approved
|
List of Unclassifed Man...
|
| IRF240SMD |
N.CHANNEL POWER MOSFET
N-Channel Power MOSFET(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):13.9A,Rds(on):0.18Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）3.9A，的Rds（on）：0.18Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）3.9A时，RDS（对）：0.18Ω））
|
SemeLAB
SEME-LAB[Seme LAB]
Air Cost Control
|
| BIR-BM13V4V-2 |
END-LOOK PACKAGE IGHT EMITTING DIODE
|
Bright LED Electronics Corp.
|
| SML50W40 |
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:500V,Id(cont):40A,Rds(on):0.12惟)(N娌??澧?己??楂???????OS?烘?搴??(Vdss:500V,Id(cont):40A,Rds(on):0.12惟))
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
SEME-LAB[Seme LAB]
SemeLAB
|
| IRF054SMD |
N-Channel Power MOSFET(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)(N沟道功率MOS场效应管(Vdss:60V,Id(cont):45A,Rds(on):0.027Ω)) N沟道功率MOSFET（减振钢板基本：60V的，身份证（续）5A条，的Rds（on）：0.027Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本0V的，身份证（续）5A条，的Rds（on.027Ω））
|
SemeLAB
Seme LAB
International Rectifier
http://
|
| 2N5484 2N5485 2N5486 SST5484 SST5485 SST5486 |
High Frequency/General Purpose
N-Channel JFETs
MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:4.5A; Current, Idm pulse:-20A; Power, Pd:1.3W; Resistance, Rds on:0.04R; SMD:1; Charge, gate p
MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:20V; Case style:SO-8; Current, Id cont:5.6A; Current, Idm pulse:-30A; Power, Pd:1.25W; Resistance, Rds on:0.025R; SMD:1; Charge, gate p
|
Vishay Siliconix
Vishay Intertechnology,Inc.
|
| APT50M50JLL |
Volts:500V RDS(ON):0.05Ohms ID(cont:)79Amps|MOSFETs 电压00V电压的RDS（ON）：0.05Ohms编号（续：）七九安培| MOSFET
|
Microsemi, Corp.
|
| APT13GP120B |
Volts:1200V VF/Vce(ON):3.6V ID(cont):13Amps|Ultrafast IGBT Family 电压200伏室的Vceon）：3.6V的身份证（续）：一三安培|超快IGBT的家
|
Commonwealth Industrial, Corp.
|
