PART |
Description |
Maker |
DS1099U DS1099 DS1099U-F DS1099U-M DS1099U-G DS109 |
16 Hz, Low-frequency dual econ oscillator 8.187 kHz, Low-frequency dual econ oscillator 16.375 kHz, Low-frequency dual econ oscillator 32.750 kHz, Low-frequency dual econ oscillator Space-Saving, 8-Channel Relay/Load Driver Low-Frequency Dual EconOscillator 511.7 Hz, Low-frequency dual econ oscillator 255.8 Hz, Low-frequency dual econ oscillator 1 Hz, Low-frequency dual econ oscillator
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Dallas Semiconducotr DALLAS[Dallas Semiconductor] MAXIM - Dallas Semiconductor
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15C01C |
Pico-TR Series Low-Frequency General-Purpose Amplifier Applications
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Sanyo Semicon Device
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12A01S |
Low-Frequency General-Purpose Amplifier Applications Pico-TR Series
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Sanyo Semicon Device
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MC74LVQ125 MC74LVQ125D MC74LVQ125DT MC74LVQ125M MC |
Enhanced Low Input (2.25V-5.5V) up to 1MHz Frequency, Sync. Buck Controller, source/sink 16-HTSSOP -40 to 85 LVQ SERIES, QUAD 1-BIT DRIVER, TRUE OUTPUT, PDSO14 Enhanced Low Input (2.25V-5.5V) up to 1MHz Frequency, Sync. Buck Controller, source/sink 16-HTSSOP -40 to 85 低电压CMOS四路缓冲 LOW-VOLTAGE CMOS QUAD BUFFER
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Motorola Mobility Holdings, Inc. Motorola, Inc
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12A01C 12A01C-E |
Low-Frequency General-Purpose Amplifier Applications Pico-TR Series TRANS GP BJT PNP 12V 0.5A 3CP
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Sanyo Semicon Device Sanyo Semiconductor
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8230-90-RC 8230-94-RC 8230-78-RC 8230-76-RC 8230-5 |
Inductor; Series:8230; Inductance:820uH; Inductance Tolerance: /- 10 %; Q Factor:30; Self Resonant Frequency:3.8MHz; Core Material:Ferrite; Leaded Process Compatible:Yes 1 ELEMENT, 820 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:100nH; Inductance Tolerance: /- 10 %; Q Factor:40; Self Resonant Frequency:690MHz; Core Material:Phenolic; Leaded Process Compatible:Yes 1 ELEMENT, 0.1 uH, PHENOLIC-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:270uH; Inductance Tolerance: /- 10 %; Q Factor:30; Self Resonant Frequency:8MHz; Core Material:Ferrite; Leaded Process Compatible:Yes 1 ELEMENT, 270 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:220uH; Inductance Tolerance: /- 10 %; Q Factor:30; Self Resonant Frequency:9MHz; Core Material:Ferrite; Leaded Process Compatible:Yes 1 ELEMENT, 220 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:39uH; Inductance Tolerance: /- 10 %; Q Factor:45; Self Resonant Frequency:22MHz; Core Material:Ferrite; Leaded Process Compatible:Yes 1 ELEMENT, 39 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:15uH; Inductance Tolerance: /- 10 %; Q Factor:45; Self Resonant Frequency:35MHz; Core Material:Iron; Leaded Process Compatible:Yes 1 ELEMENT, 15 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:18uH; Inductance Tolerance: /- 10 %; Q Factor:50; Self Resonant Frequency:32MHz; Core Material:Iron; Leaded Process Compatible:Yes 1 ELEMENT, 18 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:27uH; Inductance Tolerance: /- 10 %; Q Factor:50; Self Resonant Frequency:22MHz; Core Material:Iron; Leaded Process Compatible:Yes 1 ELEMENT, 27 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:2.7uH; Inductance Tolerance: /- 10 %; Q Factor:37; Self Resonant Frequency:100MHz; Core Material:Iron; Leaded Process Compatible:Yes 1 ELEMENT, 2.7 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:560nH; Inductance Tolerance: /- 10 %; Q Factor:30; Self Resonant Frequency:300MHz; Core Material:Phenolic; Leaded Process Compatible:Yes 1 ELEMENT, 0.56 uH, PHENOLIC-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:6.8uH; Inductance Tolerance: /- 10 %; Q Factor:50; Self Resonant Frequency:60MHz; Core Material:Iron; Leaded Process Compatible:Yes 1 ELEMENT, 6.8 uH, IRON-CORE, GENERAL PURPOSE INDUCTOR Inductor; Series:8230; Inductance:1.5uH; Inductance Tolerance: /- 10 %; Q Factor:28; Self Resonant Frequency:140MHz; Core Material:Iron; Leaded Process Compatible:Yes Inductor; Series:8230; Inductance:4.7uH; Inductance Tolerance: /- 10 %; Q Factor:45; Self Resonant Frequency:75MHz; Core Material:Iron; Leaded Process Compatible:Yes Inductor; Series:8230; Inductance:3.3uH; Inductance Tolerance: /- 10 %; Q Factor:45; Self Resonant Frequency:90MHz; Core Material:Iron; Leaded Process Compatible:Yes
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Bourns, Inc. BOURNS INC
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2SD2150 2SC4115S 2SD2264 A5800368 2SD2150R |
Low Frequency Transistor(20V/ 3A) TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 3A I(C) | SC-62 From old datasheet system Low Frequency Transistor (20V, 3A) Low Frequency Transistor(20V, 3A) Transistors > Small Signal Bipolar Transistors(up to 0.6W)
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Rohm
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MAX7384B MAX7384CRVT MAX7384CRVB MAX7384CMUK MAX73 |
11.0592 MHz, 2.7 V to 5.5 V, silicon oscillator with low-power frequency switching and reset output 12 MHz, 2.7 V to 5.5 V, silicon oscillator with low-power frequency switching and reset output Replaced by SN54197 : 50/30/100-Mhz Presettable Decade OR Binary Counters/Latches 14-CDIP -55 to 125 硅振荡器的低功耗高频开关和复位输出 14.7456 MHz, 2.7 V to 5.5 V, silicon oscillator with low-power frequency switching and reset output 10 MHz, 2.7 V to 5.5 V, silicon oscillator with low-power frequency switching and reset output
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Maxim Integrated Products, Inc. MAXIM - Dallas Semiconductor
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KSC815 KSC815YTA_NL KSC815COBU KSC815CYBU KSC815CY |
NPN Epitaxial Silicon Transistor Low Frequency Amplifier & High Frequency Oscillator
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FAIRCHILD[Fairchild Semiconductor]
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CY28312B-2 CY28312B-2T CY28312BOC-2 |
FTG for VIA K7 Series Chipset with Programmable Output Frequency FTG for VIA⑩ K7 Series Chipset with Programmable Output Frequency FTG for VIA K7 Series Chipset with Programmable Output Frequency
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Cypress Semiconductor
|
2SC3355 2SC3355-T |
For amplify low noise and high frequency HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
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NEC[NEC]
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